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公开(公告)号:US20180308705A1
公开(公告)日:2018-10-25
申请号:US16023836
申请日:2018-06-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: SHIGENOBU MAEDA , Jeong Ju PARK , Eunsung KIM , Hyunwoo KIM , Shiyong YI
IPC: H01L21/308 , H01L21/033 , H01L21/311 , H01L21/3213
CPC classification number: H01L21/3086 , H01L21/0337 , H01L21/31144 , H01L21/32139
Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.
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公开(公告)号:US20170098749A1
公开(公告)日:2017-04-06
申请号:US15280241
申请日:2016-09-29
Inventor: Seongjun PARK , Hyeonjin SHIN , Sungwng KIM , Eunsung KIM , Jaeyeol HWANG
CPC classification number: H01L35/16 , H01L21/02488 , H01L21/02502 , H01L35/10 , H01L35/18 , H01L35/34
Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.
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