公开(公告)号：US10208397B2

公开(公告)日：2019-02-19

申请号：US15204994

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Sang Min Lee ,  Hee Jong Jeong ,  Chaeho Kim ,  Ji Su Son ,  Jaebong Lee ,  Juwan Lim ,  Jungwoo Choi

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  C30B29/06 ,  C30B29/10 ,  C23C16/48 ,  C23C16/52

Abstract: An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing.

公开(公告)号：US11524973B2

公开(公告)日：2022-12-13

申请号：US16857292

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Akio Saito ,  Takanori Koide ,  Atsushi Yamashita ,  Kazuki Harano ,  Gyu-Hee Park ,  Soyoung Lee ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F9/00 ,  H01L21/285 ,  H01L51/00 ,  H01L49/02

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

公开(公告)号：US11021796B2

公开(公告)日：2021-06-01

申请号：US16212036

申请日：2018-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Hyun Lee ,  Young-Kwon Kim ,  Woo-Jae Kim ,  Seung-Min Ryu ,  Ji-Ho Uh

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/455 ,  C23C16/02 ,  H01L21/673

Abstract: A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.

公开(公告)号：US20210380622A1

公开(公告)日：2021-12-09

申请号：US17215056

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd. ,  ADEKA CORPORATION

Inventor： Seung-Min Ryu ,  Gyu-Hee Park ,  Youn Joung Cho ,  Kazuki Harano ,  Takanori Koide ,  Wakana Fuse ,  Yoshiki Manabe ,  Yutaro Aoki ,  Hiroyuki Uchiuzou ,  Kazuya Saito

IPC: C07F17/00 ,  C23C16/18 ,  C23C16/455

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US20250157809A1

公开(公告)日：2025-05-15

申请号：US18934625

申请日：2024-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeun Kim ,  Seung-Min Ryu ,  Gyu-Hee Park ,  Joongjin Park ,  Sangick Lee ,  Sanghun Lee ,  Seunghyeon Lee ,  Sejin Jang ,  Youn Joung Cho

IPC: H01L21/02 ,  C07C319/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: A thin-film forming composition includes an aluminum compound represented by General Formula (1). In General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.

公开(公告)号：US12051586B2

公开(公告)日：2024-07-30

申请号：US17022198

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Min Ryu ,  Jiyu Choi ,  Gyu-Hee Park ,  Younjoung Cho

IPC: H01L21/02 ,  C01G19/00 ,  C07C211/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C01G19/00 ,  C07C211/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/303 ,  C23C16/45553

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:

M2L1)n  [Chemical Formula 1]

In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2.





In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.