公开(公告)号：US20200343378A1

公开(公告)日：2020-10-29

申请号：US16922464

申请日：2020-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  DONG IL BAE ,  GEUMJONG BAE ,  SEUNGMIN SONG ,  JUNGGIL YANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/092 ,  H01L29/08 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/06

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

公开(公告)号：US20240234503A1

公开(公告)日：2024-07-11

申请号：US18465110

申请日：2023-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SOOJIN JEONG ,  Myung Gil Kang ,  Beomjim Park ,  Dongwon KIm ,  Younggwon Kim ,  Hyumin Yoo

IPC: H01L29/06 ,  H01L23/48 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L23/481 ,  H01L27/092 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate including first and second active regions, a first active pattern on the first active region, a second active pattern on the second active region, a device isolation layer filling a trench between the first active pattern and the second active pattern, the device isolation layer having a concave top surface, a first gate electrode in the first active region, a second gate electrode in the second active region, a gate cutting pattern disposed between the first gate electrode and the second gate electrode and separating the first gate electrode and the second gate electrode, and an insulating pattern between the gate cutting pattern and the concave top surface of the device isolation layer.

公开(公告)号：US20240021730A1

公开(公告)日：2024-01-18

申请号：US18475441

申请日：2023-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  DONG IL BAE ,  GEUMJONG BAE ,  SEUNGMIN SONG ,  JUNGGIL YANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/092 ,  H01L29/08 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/06

CPC classification number: H01L29/785 ,  H01L29/0653 ,  H01L29/42356 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/78654 ,  H01L29/42392 ,  H01L29/78618 ,  H01L29/66772 ,  H01L27/092 ,  H01L21/823807 ,  H01L27/0688 ,  H01L2029/7858

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

公开(公告)号：US20250056861A1

公开(公告)日：2025-02-13

申请号：US18583006

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  MYUNG GIL KANG ,  DONGWON KIM ,  BEOMJIN PARK ,  DONGSUK SHIN ,  HYUN-KWAN YU ,  WOOSUK CHOI ,  SEUNGPYO HONG

IPC: H01L29/66 ,  H01L21/8238 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns that are spaced apart from each other, a source/drain pattern electrically connected to the plurality of semiconductor patterns, an inner gate electrode between adjacent first and second semiconductor patterns of the plurality of semiconductor patterns, an inner gate insulating layer between the inner gate electrode and the first and second semiconductor patterns, an inner high-k dielectric layer between the inner gate electrode and the inner gate insulating layer, and an inner spacer between the inner gate insulating layer and the source/drain pattern. As the inner gate insulating layer includes an inner gate spacer, the inner gate electrode may stably fill the inner gate space. As a result, the electrical characteristics of the semiconductor device may be improved.

公开(公告)号：US20190181257A1

公开(公告)日：2019-06-13

申请号：US16018121

申请日：2018-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  DONG IL BAE ,  GEUMJONG BAE ,  SEUNGMIN SONG ,  JUNGGIL YANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

公开(公告)号：US20220115531A1

公开(公告)日：2022-04-14

申请号：US17556001

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  Dong IL BAE ,  Geumjong Bae ,  Seungmin Song ,  Junggil Yang

IPC: H01L29/78 ,  H01L27/06 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.