公开(公告)号：US20250056861A1

公开(公告)日：2025-02-13

申请号：US18583006

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  MYUNG GIL KANG ,  DONGWON KIM ,  BEOMJIN PARK ,  DONGSUK SHIN ,  HYUN-KWAN YU ,  WOOSUK CHOI ,  SEUNGPYO HONG

IPC: H01L29/66 ,  H01L21/8238 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns that are spaced apart from each other, a source/drain pattern electrically connected to the plurality of semiconductor patterns, an inner gate electrode between adjacent first and second semiconductor patterns of the plurality of semiconductor patterns, an inner gate insulating layer between the inner gate electrode and the first and second semiconductor patterns, an inner high-k dielectric layer between the inner gate electrode and the inner gate insulating layer, and an inner spacer between the inner gate insulating layer and the source/drain pattern. As the inner gate insulating layer includes an inner gate spacer, the inner gate electrode may stably fill the inner gate space. As a result, the electrical characteristics of the semiconductor device may be improved.

公开(公告)号：US20220020859A1

公开(公告)日：2022-01-20

申请号：US17192959

申请日：2021-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUN HWI CHO ,  SOONMOON JUNG ,  DONGWON KIM ,  MYUNG GIL KANG

IPC: H01L29/423 ,  H01L27/092 ,  H01L23/528 ,  H01L29/417

Abstract: Semiconductor devices and methods of forming the same are disclosed. The semiconductor devices may include a substrate including a first region and a second region, which are spaced apart from each other with a device isolation layer interposed therebetween, a first gate electrode and a second gate electrode on the first and second regions, respectively, an insulating separation pattern separating the first gate electrode and the second gate electrode from each other and extending in a second direction that traverses the first direction, a connection structure electrically connecting the first gate electrode to the second gate electrode, and a first signal line electrically connected to the connection structure. The first and second gate electrodes are extended in a first direction and are aligned to each other in the first direction. The first signal line may extend in the second direction and may vertically overlap the insulating separation pattern.

公开(公告)号：US20200321338A1

公开(公告)日：2020-10-08

申请号：US16905027

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGMIN KIM ,  DONGWON KIM

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes: channel patterns disposed on a substrate; a pair of source/drain patterns disposed at first and second sides of each of the channel patterns; and a gate electrode disposed around the channel patterns, wherein the gate electrode includes a first recessed top surface between adjacent channel patterns, wherein the channel patterns are spaced apart from the substrate, and wherein the gate electrode is disposed between the substrate and the channel patterns.

公开(公告)号：US20180277543A1

公开(公告)日：2018-09-27

申请号：US15804307

申请日：2017-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGMIN KIM ,  DONGWON KIM

IPC: H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device includes: channel patterns disposed on a substrate; a pair of source/drain patterns disposed at first and second sides of each of the channel patterns; and a gate electrode disposed around the channel patterns, wherein the gate electrode includes a first recessed top surface between adjacent channel patterns, wherein the channel patterns are spaced apart from the substrate, and wherein the gate electrode is disposed between the substrate and the channel patterns.