公开(公告)号：US20200020774A1

公开(公告)日：2020-01-16

申请号：US16453347

申请日：2019-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US10672764B2

公开(公告)日：2020-06-02

申请号：US16174894

申请日：2018-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-hoon Kim ,  Dong-myoung Kim ,  Jin-bum Kim ,  Seung-hun Lee ,  Cho-eun Lee ,  Hyun-jung Lee ,  Sung-uk Jang ,  Edward Namkyu Cho ,  Min-hee Choi

IPC: H01L27/085 ,  H01L29/06 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a first region having a first active pattern with first protrusion portions and first recess portions, and a second region having a second active pattern with second protrusion portions and second recess portions. First gate patterns are on the first protrusion portions. Second gate patterns are on the second protrusion portions. A first source/drain region is on one of the first recess portion of the first active pattern between two of the first gate patterns. The first source/drain region has a first reinforcing epitaxial layer at an upper portion thereof. A second source/drain region is on one of the second recess portions of the second active pattern between two of the second gate patterns. The second source/drain region has a second reinforcing epitaxial layer having an epitaxial growth surface that is shaped differently than a first epitaxial growth surface of the first reinforcing epitaxial layer.

公开(公告)号：US20190252376A1

公开(公告)日：2019-08-15

申请号：US16174894

申请日：2018-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-hoon Kim ,  Dong-myoung Kim ,  Jin-bum Kim ,  Seung-hun Lee ,  Cho-eun Lee ,  Hyun-jung Lee ,  Sung-uk Jang ,  Edward Namkyu Cho ,  Min-hee Choi

IPC: H01L27/085 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor device includes a first region having a first active pattern with first protrusion portions and first recess portions, and a second region having a second active pattern with second protrusion portions and second recess portions. First gate patterns are on the first protrusion portions. Second gate patterns are on the second protrusion portions. A first source/drain region is on one of the first recess portion of the first active pattern between two of the first gate patterns. The first source/drain region has a first reinforcing epitaxial layer at an upper portion thereof. A second source/drain region is on one of the second recess portions of the second active pattern between two of the second gate patterns. The second source/drain region has a second reinforcing epitaxial layer having an epitaxial growth surface that is shaped differently than a first epitaxial growth surface of the first reinforcing epitaxial layer.

公开(公告)号：US12027586B2

公开(公告)日：2024-07-02

申请号：US18347090

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823814 ,  H01L29/785

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US11735631B2

公开(公告)日：2023-08-22

申请号：US17470288

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823814 ,  H01L29/785

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US11145720B2

公开(公告)日：2021-10-12

申请号：US16453347

申请日：2019-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.