公开(公告)号：US20170331396A1

公开(公告)日：2017-11-16

申请号：US15589091

申请日：2017-05-08

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyungeun BYUN ,  Jaeyoung KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Jeongmin BAIK ,  Woojung YANG ,  Byeonguk YE ,  Jaewon LEE ,  Jinpyo LEE ,  Kyeongnam KIM

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.

公开(公告)号：US20180190800A1

公开(公告)日：2018-07-05

申请号：US15904967

申请日：2018-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungeun BYUN ,  Jisoo KYOUNG ,  Seongjun PARK ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Jaeho LEE

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/45

CPC classification number: H01L29/66977 ,  H01L29/456 ,  H01L29/78

Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

公开(公告)号：US20160315561A1

公开(公告)日：2016-10-27

申请号：US15049726

申请日：2016-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Kyungeun BYUN ,  Minsu SEOL ,  Seongjun PARK

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.

Abstract translation: 摩擦电发生器包括彼此面对的第一和第二电极，以及设置在第一电极上并通过与其它材料接触而产生电能的第一能量产生层，第一能量产生层包括具有晶体的二维（2D）材料 2D形状的结构。

公开(公告)号：US20190161351A1

公开(公告)日：2019-05-30

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changseok LEE ,  Changhyun KIM ,  Kyungeun BYUN ,  Seungwon LEE ,  Eunkyu LEE

IPC: C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

公开(公告)号：US20150155374A1

公开(公告)日：2015-06-04

申请号：US14528338

申请日：2014-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungeun BYUN ,  Jisoo KYOUNG ,  Seongjun PARK ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Jaeho LEE

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/267

CPC classification number: H01L29/66977 ,  H01L29/456 ,  H01L29/78

Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

Abstract translation: 电子器件包括半导体层，由包括二维（2D）材料的材料形成的隧道层，以便直接接触半导体层的特定区域，以及形成在隧道层上的金属层。

公开(公告)号：US20210210346A1

公开(公告)日：2021-07-08

申请号：US16923478

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Kyungeun BYUN ,  Hyeonjin SHIN ,  Soyoung LEE ,  Changseok LEE

IPC: H01L21/02 ,  H01L29/16 ,  C23C16/50 ,  C23C16/26

Abstract: A graphene structure and a method of forming the graphene structure are provided. The graphene structure includes directly grown graphene that is directly grown on a surface of a substrate and has controlled surface energy.

公开(公告)号：US20210083600A1

公开(公告)日：2021-03-18

申请号：US17097232

申请日：2020-11-13

Applicant: Samsung Electronics Co., Ltd. ,  UNITS (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Jae-Young KIM ,  Kyungeun BYUN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Jeongmin BAIK ,  Jinsung CHUN ,  Byeonguk YE

IPC: H02N2/18 ,  H02N1/04

Abstract: A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.