公开(公告)号：US09397231B2

公开(公告)日：2016-07-19

申请号：US14337811

申请日：2014-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ju Kim ,  Jae-June Jang ,  Hoon Chang ,  Jae-Ho Kim ,  Kyu-Heon Cho

IPC: H01L29/872 ,  H01L29/36 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/36 ,  H01L29/66143

Abstract: A semiconductor device having a wide depletion region for increasing the breakdown voltage of the device includes an epitaxial layer of a first conductive type. An anode electrode and a cathode electrode are arranged on the epitaxial layer to be separated from each other. A first drift layer of the first conductive type formed in the epitaxial layer. A Schottky contact area is at a region of contact between the anode electrode and the first drift layer. An impurity region of a second conductive type is different from the first conductive type at the epitaxial layer. An insular impurity region is formed below the Schottky contact area.

Abstract translation: 具有用于增加器件的击穿电压的宽耗尽区的半导体器件包括第一导电类型的外延层。 阳极电极和阴极电极布置在外延层上以彼此分离。 第一导电类型的第一漂移层形成在外延层中。 肖特基接触区域位于阳极电极和第一漂移层之间的接触区域。 第二导电类型的杂质区域与外延层处的第一导电类型不同。 在肖特基接触区域下面形成一个杂质区域。

公开(公告)号：US09627492B2

公开(公告)日：2017-04-18

申请号：US14964758

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhwan Kim ,  Jaehyun Jung ,  Jungkyung Kim ,  Kyuok Lee ,  Jaejune Jang ,  Changki Jeon ,  Suyeon Cho ,  Seonghoon Ko ,  Kyu-Heon Cho

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/402 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66689 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.