公开(公告)号：US09696911B2

公开(公告)日：2017-07-04

申请号：US15062994

申请日：2016-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Ju Kim ,  Young Woo Jung ,  Jeonghoon Cho

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/0253 ,  G06F2212/7205 ,  G11C7/22 ,  G11C16/32 ,  G11C2207/2272

Abstract: A nonvolatile memory system includes a memory controller and a nonvolatile memory. A method of operating the nonvolatile memory system includes receiving a command that includes an urgency level from an external device, adjusting an operation time of an operation of the command based on the urgency level, completing the operation of the command within the adjusted operation time, and transmitting a completion response to the external device.

公开(公告)号：US09397231B2

公开(公告)日：2016-07-19

申请号：US14337811

申请日：2014-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ju Kim ,  Jae-June Jang ,  Hoon Chang ,  Jae-Ho Kim ,  Kyu-Heon Cho

IPC: H01L29/872 ,  H01L29/36 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/36 ,  H01L29/66143

Abstract: A semiconductor device having a wide depletion region for increasing the breakdown voltage of the device includes an epitaxial layer of a first conductive type. An anode electrode and a cathode electrode are arranged on the epitaxial layer to be separated from each other. A first drift layer of the first conductive type formed in the epitaxial layer. A Schottky contact area is at a region of contact between the anode electrode and the first drift layer. An impurity region of a second conductive type is different from the first conductive type at the epitaxial layer. An insular impurity region is formed below the Schottky contact area.

Abstract translation: 具有用于增加器件的击穿电压的宽耗尽区的半导体器件包括第一导电类型的外延层。 阳极电极和阴极电极布置在外延层上以彼此分离。 第一导电类型的第一漂移层形成在外延层中。 肖特基接触区域位于阳极电极和第一漂移层之间的接触区域。 第二导电类型的杂质区域与外延层处的第一导电类型不同。 在肖特基接触区域下面形成一个杂质区域。

公开(公告)号：US09059023B2

公开(公告)日：2015-06-16

申请号：US14063196

申请日：2013-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-June Jang ,  Hyun-Ju Kim ,  Seo-In Park

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/4983 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

Abstract: A semiconductor device includes a gate pattern over source and drain regions. The gate pattern includes a first gate adjacent the source region and a second gate adjacent the drain region. A concentration of dopants in the first gate is higher than a concentration of dopants in the second gate. As a result, channels are produced between the source and drain regions based on different threshold voltages.

Abstract translation: 半导体器件包括在源极和漏极区域上的栅极图案。 栅极图案包括邻近源极区域的第一栅极和邻近漏极区域的第二栅极。 第一栅极中掺杂剂的浓度高于第二栅极中掺杂剂的浓度。 结果，基于不同的阈值电压在源区和漏区之间产生通道。