公开(公告)号：US20240405040A1

公开(公告)日：2024-12-05

申请号：US18423984

申请日：2024-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghoon Ko ,  Jae Ho Kim ,  Wook Lee

IPC: H01L27/146

Abstract: The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.

公开(公告)号：US09627492B2

公开(公告)日：2017-04-18

申请号：US14964758

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhwan Kim ,  Jaehyun Jung ,  Jungkyung Kim ,  Kyuok Lee ,  Jaejune Jang ,  Changki Jeon ,  Suyeon Cho ,  Seonghoon Ko ,  Kyu-Heon Cho

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/402 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66689 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

公开(公告)号：US20230343800A1

公开(公告)日：2023-10-26

申请号：US18093609

申请日：2023-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoungeun CHANG ,  Sungin Kim ,  Seonghoon Ko ,  Donghyun Kim ,  Wook Lee

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a substrate having a pixel region in which an active region having a locally asymmetric fin region limited by a locally cutout space is defined and a transistor provided in the pixel region. The transistor includes a horizontal gate portion provided on the active region and a vertical gate portion filling the locally cutout space and facing one of fin sidewalls of the locally asymmetric fin region. Distances of the source region and drain region formed in the active region from the locally asymmetric fin region are different from each other. An electronic system includes at least one camera module including an image sensor and a processor configured to process image data provided from the at least one camera module.