公开(公告)号：US20170365555A1

公开(公告)日：2017-12-21

申请号：US15389856

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hun Choi ,  Jeong-Ik Kim ,  Chul-Sung Kim ,  Jae-Eun Lee ,  Sang-Jin Hyun

IPC: H01L23/535 ,  H01L23/532 ,  H01L23/528 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L23/535 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/785

Abstract: Semiconductor devices may include a structure on a substrate, an insulating interlayer, a metal silicide pattern, a first barrier pattern, a second barrier pattern and a metal pattern. The structure may include silicon. The insulating interlayer may include a contact hole exposing a surface of the structure. The metal silicide pattern may be in a lower portion of the contact hole, and the metal silicide pattern may directly contact the exposed surface of the structure. The first barrier pattern may directly contact an upper surface of the metal silicide pattern and a sidewall of the contact hole. The first barrier pattern may include a metal nitride. The second barrier pattern may be formed on the first barrier pattern. The second barrier pattern may include a metal nitride. The metal pattern may be formed on the second barrier pattern. The metal pattern may be in the contact hole.

公开(公告)号：US10134856B2

公开(公告)日：2018-11-20

申请号：US15254297

申请日：2016-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Da-Il Eom ,  Jeong-Ik Kim ,  Ja-Hum Ku ,  Chul-Sung Kim ,  Jun-Ki Park ,  Sang-Jin Hyun

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/66 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device includes an active fin partially protruding from an isolation pattern on a substrate, a gate structure on the active fin, a source/drain layer on a portion of the active fin adjacent to the gate structure, a source/drain layer on a portion of the active fin adjacent to the gate structure, a metal silicide pattern on the source/drain layer, and a plug on the metal silicide pattern. The plug includes a second metal pattern, a metal nitride pattern contacting an upper surface of the metal silicide pattern and covering a bottom and a sidewall of the second metal pattern, and a first metal pattern on the metal silicide pattern, the first metal pattern covering an outer sidewall of the metal nitride pattern. A nitrogen concentration of the first metal pattern gradually decreases according to a distance from the outer sidewall of the metal nitride pattern.