公开(公告)号：US11062940B2

公开(公告)日：2021-07-13

申请号：US16442936

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: C23C16/455 ,  H01L21/768 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  C07F11/00 ,  H01L21/285 ,  H01L27/108 ,  H01L27/11582 ,  H01L49/02

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US20150091133A1

公开(公告)日：2015-04-02

申请号：US14315770

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ho Cho ,  Hyun-Jeong Yang ,  Se-Hoon Oh ,  Yong-Jae Lee ,  Ki-Vin IM ,  Jae-Soon Lim ,  Han-Jin Lim ,  Jae-Wan Chang ,  Chang-Hwa Jung

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

Abstract: In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material.

Abstract translation: 在半导体器件及其形成方法中，半导体器件包括衬底，衬底上的下电极和下电极上的电介质层。 粘合层位于介电层上，上电极位于粘合层上。 粘合层接触电介质层和上电极，并且包括导电材料。

公开(公告)号：US10361118B2

公开(公告)日：2019-07-23

申请号：US15498945

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-Yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: H01L21/768 ,  C07F11/00 ,  H01L21/285 ,  C07F17/00

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US20180102284A1

公开(公告)日：2018-04-12

申请号：US15498945

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-Yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: H01L21/768 ,  H01L21/285 ,  C07F11/00

CPC classification number: H01L21/76841 ,  C07F11/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L27/1085 ,  H01L27/11582 ,  H01L28/60

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US09685498B2

公开(公告)日：2017-06-20

申请号：US15201704

申请日：2016-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeol Kang ,  Suk-Jin Chung ,  Youn-Soo Kim ,  Jae-Hyoung Choi ,  Jae-Soon Lim ,  Min-Young Park

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L27/108 ,  H01L29/78

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.