公开(公告)号：US09553141B2

公开(公告)日：2017-01-24

申请号：US14858069

申请日：2015-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US09142558B2

公开(公告)日：2015-09-22

申请号：US14066000

申请日：2013-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US20150091133A1

公开(公告)日：2015-04-02

申请号：US14315770

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ho Cho ,  Hyun-Jeong Yang ,  Se-Hoon Oh ,  Yong-Jae Lee ,  Ki-Vin IM ,  Jae-Soon Lim ,  Han-Jin Lim ,  Jae-Wan Chang ,  Chang-Hwa Jung

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

Abstract: In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material.

Abstract translation: 在半导体器件及其形成方法中，半导体器件包括衬底，衬底上的下电极和下电极上的电介质层。 粘合层位于介电层上，上电极位于粘合层上。 粘合层接触电介质层和上电极，并且包括导电材料。