公开(公告)号：US20240124979A1

公开(公告)日：2024-04-18

申请号：US18227467

申请日：2023-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyu LIM ,  Yoonbon Koo ,  Hanhim Kang ,  Suji Gim ,  Jongkoo Lim

IPC: C23C16/455 ,  C23C16/52 ,  H10B41/27 ,  H10B43/27

CPC classification number: C23C16/45561 ,  C23C16/52 ,  H10B41/27 ,  H10B43/27

Abstract: The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.

公开(公告)号：US20230420248A1

公开(公告)日：2023-12-28

申请号：US18176692

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjun AHN ,  Hongtaek Lim ,  Kyoungwoo Hong ,  Hanhim Kang ,  Yeongyeop Song

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/285

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02208 ,  H01L21/32051 ,  H01L21/28506

Abstract: A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H2) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.