公开(公告)号：US20240124979A1

公开(公告)日：2024-04-18

申请号：US18227467

申请日：2023-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyu LIM ,  Yoonbon Koo ,  Hanhim Kang ,  Suji Gim ,  Jongkoo Lim

IPC: C23C16/455 ,  C23C16/52 ,  H10B41/27 ,  H10B43/27

CPC classification number: C23C16/45561 ,  C23C16/52 ,  H10B41/27 ,  H10B43/27

Abstract: The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.