公开(公告)号：US11121134B2

公开(公告)日：2021-09-14

申请号：US16860276

申请日：2020-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ho Lee ,  Eun A Kim ,  Ki Seok Lee ,  Jay-Bok Choi ,  Keun Nam Kim ,  Yong Seok Ahn ,  Jin-Hwan Chun ,  Sang Yeon Han ,  Sung Hee Han ,  Seung Uk Han ,  Yoo Sang Hwang

IPC: H01L21/00 ,  H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

公开(公告)号：US10685963B2

公开(公告)日：2020-06-16

申请号：US16242127

申请日：2019-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiseok Lee ,  Keunnam Kim ,  Eun A Kim ,  Eunjung Kim ,  Jeongseop Shim

IPC: H01L21/28 ,  H01L21/306 ,  H01L21/308 ,  H01L27/108 ,  H01L27/22 ,  H01L27/24 ,  H01L29/423

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises forming an active structure including a plurality of active patterns, a device isolation layer defining the active patterns, and a gate structure across the active patterns and extending in a first direction, forming a first mask pattern on the active structure, and forming a trench by using the first mask pattern as an etching mask to pattern the active structure. Forming the first mask pattern comprises forming in a first mask layer a plurality of first openings extending in a second direction intersecting the first direction, and forming in the first mask layer a plurality of second openings extending in a third direction intersecting the first and second directions.

公开(公告)号：US11600570B2

公开(公告)日：2023-03-07

申请号：US17097337

申请日：2020-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Sub Kim ,  Sohyun Park ,  Daewon Kim ,  Dongoh Kim ,  Eun A Kim ,  Chulkwon Park ,  Taejin Park ,  Kiseok Lee ,  Sunghee Han

IPC: H01L23/535 ,  H01L21/768 ,  H01L27/108 ,  H01L23/532

Abstract: A semiconductor memory device is disclosed. The device may include first and second impurity regions provided in a substrate and spaced apart from each other, the second impurity region having a top surface higher than the first impurity region, a device isolation pattern interposed between the first and second impurity regions, a first contact plug, which is in contact with the first impurity region and has a bottom surface lower than the top surface of the second impurity region, a gap-fill insulating pattern interposed between the first contact plug and the second impurity region, a first protection spacer interposed between the gap-fill insulating pattern and the second impurity region, and a first spacer, which is in contact with a side surface of the first contact plug and the device isolation pattern and is interposed between the first protection spacer and the gap-fill insulating pattern.

公开(公告)号：US10211282B2

公开(公告)日：2019-02-19

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/08

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US11594538B2

公开(公告)日：2023-02-28

申请号：US17469340

申请日：2021-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ho Lee ,  Eun A Kim ,  Ki Seok Lee ,  Jay-Bok Choi ,  Keun Nam Kim ,  Yong Seok Ahn ,  Jin-Hwan Chun ,  Sang Yeon Han ,  Sung Hee Han ,  Seung Uk Han ,  Yoo Sang Hwang

IPC: H01L21/00 ,  H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

公开(公告)号：US10692968B2

公开(公告)日：2020-06-23

申请号：US16697484

申请日：2019-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/08

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US20190355727A1

公开(公告)日：2019-11-21

申请号：US16242127

申请日：2019-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiseok Lee ,  Keunnam Kim ,  Eun A Kim ,  Eunjung Kim ,  Jeongseop Shim

IPC: H01L27/108 ,  H01L27/22 ,  H01L27/24 ,  H01L21/28 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises forming an active structure including a plurality of active patterns, a device isolation layer defining the active patterns, and a gate structure across the active patterns and extending in a first direction, forming a first mask pattern on the active structure, and forming a trench by using the first mask pattern as an etching mask to pattern the active structure. Forming the first mask pattern comprises forming in a first mask layer a plurality of first openings extending in a second direction intersecting the first direction, and forming in the first mask layer a plurality of second openings extending in a third direction intersecting the first and second directions.

公开(公告)号：US20180012955A1

公开(公告)日：2018-01-11

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/08

CPC classification number: H01L28/90 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/88 ,  H01L28/92

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.