Invention Grant
- Patent Title: Capacitor structures, decoupling structures and semiconductor devices including the same
-
Application No.: US16697484Application Date: 2019-11-27
-
Publication No.: US10692968B2Publication Date: 2020-06-23
- Inventor: Jong-Min Lee , Jongryul Jun , Eun A Kim , Jung-Bum Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@ccde4e3
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02 ; H01L27/08

Abstract:
Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.
Public/Granted literature
- US20200098854A1 CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME Public/Granted day:2020-03-26
Information query
IPC分类: