公开(公告)号：US20230187185A1

公开(公告)日：2023-06-15

申请号：US17948943

申请日：2022-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUMIN PARK ,  SUNGHWAN KIM ,  HAKYOUNG KIM ,  DAEHYUN LEE ,  DONGYUN YEO ,  MINYOUNG HUR

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32082 ,  H01J2237/327

Abstract: A plasma battle includes a lower ring and an upper ring that extends upwardly from an edge of the lower ring. The lower ring includes a lower central hole on a center of the lower ring and vertically penetrating the lower ring and a lower slit outside the lower central hole and vertically penetrating the lower ring. The upper ring includes an upper central hole on a center of the upper ring and vertically penetrating the upper ring and an upper slit that penetrates the upper ring so as to connect an inner lateral surface of the upper ring to an outer lateral surface of the upper ring.

公开(公告)号：US20240100639A1

公开(公告)日：2024-03-28

申请号：US18233374

申请日：2023-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： INSEOK SEO ,  MINSUNG KIM ,  DASOM LEE ,  HEEWON MIN ,  DONGYUN YEO

IPC: B23Q3/15

CPC classification number: B23Q3/15 ,  H01L21/6833

Abstract: An electrostatic chuck includes a cooling plate having a cooling flow path, an insulating plate disposed on the cooling plate, an upper plate disposed on the insulating plate and fixed to the cooling plate, and a fastening member coupling the cooling plate to the upper plate. The fastening member passes through the cooling plate and is coupled to a fastening portion provided on a lower surface of the upper plate. Movement of the fastening member is constrained only in a first direction intersecting an upper surface of the upper plate.

公开(公告)号：US20220013397A1

公开(公告)日：2022-01-13

申请号：US17165594

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehyun LEE ,  YOUNGIL KANG ,  YOUNGEUN KIM ,  Jaesuk KIM ,  MINJI PARK ,  SANGWOOK PARK ,  Dongho Shin ,  DONGYUN YEO ,  CHUNGHUN LEE ,  KYOUNG-MI CHOI

IPC: H01L21/683 ,  H01J37/32

Abstract: Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.