公开(公告)号：US20220013397A1

公开(公告)日：2022-01-13

申请号：US17165594

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehyun LEE ,  YOUNGIL KANG ,  YOUNGEUN KIM ,  Jaesuk KIM ,  MINJI PARK ,  SANGWOOK PARK ,  Dongho Shin ,  DONGYUN YEO ,  CHUNGHUN LEE ,  KYOUNG-MI CHOI

IPC: H01L21/683 ,  H01J37/32

Abstract: Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.