公开(公告)号：US20220013397A1

公开(公告)日：2022-01-13

申请号：US17165594

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehyun LEE ,  YOUNGIL KANG ,  YOUNGEUN KIM ,  Jaesuk KIM ,  MINJI PARK ,  SANGWOOK PARK ,  Dongho Shin ,  DONGYUN YEO ,  CHUNGHUN LEE ,  KYOUNG-MI CHOI

IPC: H01L21/683 ,  H01J37/32

Abstract: Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.

公开(公告)号：US20230130345A1

公开(公告)日：2023-04-27

申请号：US17709971

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYOUNGMIN KIM ,  DONGGEON KIM ,  MYEONGSIK RYU ,  SANGWOOK PARK ,  INSEOK BAEK ,  BOKYEON WON

IPC: H01L27/108 ,  H01L25/065 ,  G11C11/408 ,  H01L29/423

Abstract: A sub word-line driver circuit of a semiconductor memory device includes a first active pattern and a second active pattern in a substrate, and a gate pattern. The first active pattern includes a first drain region and a first source region of a first keeping transistor that precharges a first word-line which is inactive and extends in a first direction with a negative voltage. The second active pattern includes a second drain region and a second source region of a second keeping transistor that precharges a second word-line which is inactive and extends in the first direction with the negative voltage. The gate pattern is on a portion of the first active pattern and on a portion of the second active pattern, partially overlaps the first active pattern and the second active pattern.