公开(公告)号：US08889032B2

公开(公告)日：2014-11-18

申请号：US13728463

申请日：2012-12-27

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Hyun Choung ,  In-Bae Kim ,  Seon-II Kim ,  Hong Sick Park ,  Jae Woo Jeong ,  Gyu-Po Kim ,  Won-Guk Seo ,  Hyun-Cheol Shin ,  Ki-Beom Lee ,  Sam-Young Cho ,  Seung-Yeon Han

IPC: C09K13/04 ,  H01L21/48 ,  C23F1/26 ,  C23F1/18

CPC classification number: C23F1/18 ,  C23F1/26 ,  H01L21/4814

Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Abstract translation: 包括过硫酸盐，磺酸盐，氟化合物，唑类化合物，有机酸，硝酸盐和氯化合物的金属线蚀刻剂及其制备方法。

公开(公告)号：US09235074B2

公开(公告)日：2016-01-12

申请号：US13961793

申请日：2013-08-07

Applicant: Samsung Display Co., Ltd.

Inventor： Hong Sick Park ,  Seon-II Kim ,  Min Ho Moon ,  Hyang-Shik Kong ,  Yeun Tae Kim ,  Chang Oh Jeong

IPC: G02F1/1333 ,  G02F1/1341 ,  G02F1/1345

CPC classification number: G02F1/13458 ,  G02F1/133305 ,  G02F1/133377 ,  G02F1/1341 ,  G02F1/136286 ,  G02F1/1368

Abstract: The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.