公开(公告)号：US20180323137A1

公开(公告)日：2018-11-08

申请号：US15678698

申请日：2017-08-16

Applicant: QUALCOMM Incorporated

Inventor： Kuiwon KANG ,  Houssam JOMAA ,  Layal ROUHANA ,  Seongryul CHOI

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L21/561 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5384

Abstract: A device comprising a semiconductor die, a package substrate coupled to the semiconductor die, and an encapsulation layer that at least partially encapsulates the semiconductor die. The package substrate includes at least one stacked via. The at least one stacked via includes a first via and a second via coupled to the first via. The second via includes a seed layer coupled to the first via. The second via includes a different shape than the first via. The package substrate includes a prepreg layer. The package substrate includes a first pad coupled to the first via, and a second pad coupled to the second via.

公开(公告)号：US20180269186A1

公开(公告)日：2018-09-20

申请号：US15867518

申请日：2018-01-10

Applicant: QUALCOMM Incorporated

Inventor： Kuiwon KANG ,  Houssam JOMAA ,  Christopher BAHR ,  Layal ROUHANA

IPC: H01L25/10 ,  H01L23/538 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00

Abstract: A package that includes a substrate comprising an interposer interconnect and a cavity, a redistribution portion coupled to the substrate, the redistribution comprising a plurality of redistribution interconnects, and a first die coupled to the redistribution portion through the cavity of the substrate. A substantial region between a side surface of the first die and the substrate is free of an encapsulation layer. In some implementations, the substrate is free of a metal ring that surrounds the first die. In some implementations, the redistribution portion comprises a barrier layer and a first interconnect coupled to the barrier layer. The barrier layer is coupled to the interposer interconnect.

公开(公告)号：US20160183386A1

公开(公告)日：2016-06-23

申请号：US14617864

申请日：2015-02-09

Applicant: QUALCOMM Incorporated

Inventor： Young Kyu SONG ,  Layal ROUHANA ,  Kyu-Pyung HWANG ,  Omar James BCHIR

IPC: H05K3/46 ,  H05K3/32 ,  H05K1/11 ,  H05K1/18 ,  H05K1/02

CPC classification number: H05K3/4644 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K1/0231 ,  H05K1/0234 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/111 ,  H05K1/113 ,  H05K1/114 ,  H05K1/115 ,  H05K1/167 ,  H05K1/181 ,  H05K3/1258 ,  H05K3/321 ,  H05K3/3442 ,  H05K3/4697 ,  H05K2201/0792 ,  H05K2201/09227 ,  H05K2201/09281 ,  H05K2201/09954 ,  H05K2201/10015 ,  H05K2201/10636 ,  H05K2203/0545 ,  Y02P70/611

Abstract: Methods and apparatus for controlling an equivalent-series resistance (ESR) of a capacitor are provided. An exemplary apparatus includes a substrate having a land side, the capacitor mounted on the land side of the substrate and having both the ESR and terminals, a resistive pattern coupled to the terminals, and a plurality of vias coupled to the resistive pattern. The resistive pattern is configured to control the ESR. The resistive pattern can be formed of a resistive paste. The resistive pattern can be formed in a substantially semicircular shape having an arc ranging from substantially 45 degrees to substantially 135 degrees. The capacitor can be a surface mount device. The resistive pattern can be formed in a shape of a land-side capacitor mounting pad, a via, or both.

Abstract translation: 提供了用于控制电容器的等效串联电阻（ESR）的方法和装置。 示例性装置包括具有接地侧的基板，安装在基板的接地侧上并具有ESR和端子的电容器，耦合到端子的电阻图案以及耦合到电阻图案的多个通孔。 电阻模式被配置为控制ESR。 电阻图案可以由电阻浆料形成。 电阻图案可以形成为具有大致45度至基本上135度的弧度的大致半圆形状。 电容器可以是表面贴装器件。 电阻图案可以形成为陆侧电容器安装垫，通孔或两者的形状。

公开(公告)号：US20160093567A1

公开(公告)日：2016-03-31

申请号：US14498397

申请日：2014-09-26

Applicant: QUALCOMM Incorporated

Inventor： Chin-Kwan KIM ,  Rajneesh KUMAR ,  Layal ROUHANA ,  Joan Rey V. BUOT ,  Omar James BCHIR

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76834 ,  H01L21/76898 ,  H01L23/145 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5223 ,  H01L23/5389 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15333 ,  H01L2924/19041 ,  H01L2924/19106

Abstract: A semiconductor substrate according to some examples of the disclosure may include a substrate with a cavity in a top surface of the substrate, a plurality of cavity interconnections embedded below a bottom surface of the cavity and extending to a bottom surface of the substrate, and a plurality of side interconnections to either side of the cavity extending from the top surface of the substrate to the bottom surface of the substrate. Each of the plurality of side interconnections may include an electrically conductive stop etch layer in the same horizontal plane as the bottom of the cavity.

Abstract translation: 根据本公开的一些示例的半导体衬底可以包括在衬底的顶表面中具有空腔的衬底，多个腔互连嵌入在腔的底表面下方并延伸到衬底的底表面，并且 多个侧面互连到空腔的任一侧，从衬底的顶表面延伸到衬底的底表面。 多个侧面互连中的每一个可以包括在与空腔的底部相同的水平平面中的导电停止蚀刻层。