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公开(公告)号:US11366398B2
公开(公告)日:2022-06-21
申请号:US17254357
申请日:2019-07-18
Applicant: NOVA LTD.
Inventor: Gilad Barak , Michael Chemama , Smadar Ferber , Yanir Hainick , Boris Levant , Ze'Ev Lindenfeld , Dror Shafir , Yuri Shirman , Elad Schleifer
Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.
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公开(公告)号:US11946875B2
公开(公告)日:2024-04-02
申请号:US17935930
申请日:2022-09-27
Applicant: NOVA LTD.
Inventor: Gilad Barak , Dror Shafir , Yanir Hainick , Shahar Gov
IPC: G01N21/956 , G01N21/95 , G03F7/00
CPC classification number: G01N21/956 , G01N21/9501 , G03F7/70616 , G03F7/70625 , G01B2210/56
Abstract: A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.
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公开(公告)号:US11460415B2
公开(公告)日:2022-10-04
申请号:US16882784
申请日:2020-05-26
Applicant: NOVA LTD.
Inventor: Gilad Barak , Dror Shafir , Yanir Hainick , Shahar Gov
IPC: G01N21/956 , G01N21/95 , G03F7/20
Abstract: A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.
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公开(公告)号:US11885737B2
公开(公告)日:2024-01-30
申请号:US17135924
申请日:2020-12-28
Applicant: NOVA LTD.
Inventor: Dror Shafir , Gilad Barak , Shay Wolfling , Michal Haim Yachini , Matthew Sendelbach , Cornel Bozdog
CPC classification number: G01N21/21 , G01N21/211 , G01N2021/4792 , G01N2201/061 , G01N2201/0683
Abstract: A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern. A set of at least first and second measurements on a patterned region of a sample is performed, where each of the measurements comprises: directing illuminating light onto the patterned region along an illumination channel and collecting light reflected from the illuminated region propagating along a collection channel to be detected, such that detected light from the same patterned region has different polarization states which are different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement. Thus, at least first and second measured data pieces are generated for the at least first and second measurements on the same patterned region. The at least first and second measured data pieces are analyzed and output data is generated being indicative of a condition of asymmetry in the patterned region.
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