公开(公告)号：US07206659B2

公开(公告)日：2007-04-17

申请号：US11345390

申请日：2006-02-02

申请人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

发明人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

IPC分类号： G06F19/00

CPC分类号： G05B19/404 ,  G05B2219/35286 ,  G05B2219/41119 ,  G05B2219/42128 ,  G05B2219/42129 ,  G05B2219/42132

摘要： A numerical controller capable of obviating the waste of a workpiece by machining such that a position deviation by learning control is converged and automatically performing storage of correction data and actual machining. A tool and the workpiece are moved to noninterfering positions. In a learning control interval from the issuance of a learning control start command to the issuance of a learning control end command, the input and output are turned on so that the learning control is performed to input the position deviation and create and output the correction data. Processing in the learning control interval that involves the learning control is repeatedly executed a set number of times by idling operations. The obtained data is automatically stored in the numerical controller, the tool and the workpiece are moved to interfering positions, and the position deviation is corrected based on the correction data, whereby actual machining is performed. The correction data is automatically stored and the actual machining is performed using the correction data without wasting the workpiece, so that the cycle time can be shortened.

摘要翻译： 一种能够通过机械加工消除工件浪费的数值控制器，使得通过学习控制的位置偏差被收敛并自动执行校正数据的存储和实际加工。 工具和工件移动到非干扰位置。 在从发出学习控制开始命令到发出学习控制结束命令的学习控制间隔中，输入和输出被打开，从而执行学习控制以输入位置偏差并创建和输出校正数据 。 涉及学习控制的学习控制间隔的处理通过空转操作重复执行一定次数。 所获得的数据被自动存储在数字控制器中，工具和工件移动到干涉位置，并且基于校正数据校正位置偏差，从而进行实际加工。 校正数据被自动存储，并且使用校正数据执行实际加工，而不浪费工件，从而可以缩短循环时间。

公开(公告)号：US20060173573A1

公开(公告)日：2006-08-03

申请号：US11345390

申请日：2006-02-02

申请人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

发明人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

IPC分类号： G06F19/00

CPC分类号： G05B19/404 ,  G05B2219/35286 ,  G05B2219/41119 ,  G05B2219/42128 ,  G05B2219/42129 ,  G05B2219/42132

摘要： A numerical controller capable of obviating the waste of a workpiece by machining such that a position deviation by learning control is converged and automatically performing storage of correction data and actual machining. A tool and the workpiece are moved to noninterfering positions. In a learning control interval from the issuance of a learning control start command to the issuance of a learning control end command, the input and output are turned on so that the learning control is performed to input the position deviation and create and output the correction data. Processing in the learning control interval that involves the learning control is repeatedly executed a set number of times by idling operations. The obtained data is automatically stored in the numerical controller, the tool and the workpiece are moved to interfering positions, and the position deviation is corrected based on the correction data, whereby actual machining is performed. The correction data is automatically stored and the actual machining is performed using the correction data without wasting the workpiece, so that the cycle time can be shortened.

摘要翻译： 一种能够通过机械加工消除工件浪费的数值控制器，使得通过学习控制的位置偏差被收敛并自动执行校正数据的存储和实际加工。 工具和工件移动到非干扰位置。 在从发出学习控制开始命令到发出学习控制结束命令的学习控制间隔中，输入和输出被打开，从而执行学习控制以输入位置偏差并创建和输出校正数据 。 涉及学习控制的学习控制间隔的处理通过空转操作重复执行一定次数。 所获得的数据被自动存储在数字控制器中，工具和工件移动到干涉位置，并且基于校正数据校正位置偏差，从而进行实际加工。 校正数据被自动存储，并且使用校正数据执行实际加工，而不浪费工件，从而可以缩短循环时间。

公开(公告)号：US07254461B2

公开(公告)日：2007-08-07

申请号：US11344208

申请日：2006-02-01

申请人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

发明人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

IPC分类号： G06F19/00

CPC分类号： G05B19/4063 ,  G05B2219/42018 ,  G05B2219/42141

摘要： A numerical controller capable of checking a learning control execution interval for the entry of a command or signal that varies an operation pattern. The numerical controller reads machining programs in succession and sets a flag F to 1 until a learning control end command is read after a learning control start command is read. In a learning control interval during which the flag F is set to 1, it is determined whether or not an inappropriate command or signal is inputted during a learning process such that the operation pattern is varied. If it is concluded that such a command or signal is inputted, an alarm stop or feed hold stop is performed, the cause of stopping is displayed, and learning control is nullified. If any inappropriate command or signal is inputted during the learning process, the operation is stopped and the cause is displayed, so that the machining programs can be corrected with ease. Thus, wrong cutting or the like can be prevented from being caused by the learning control.

摘要翻译： 一种数字控制器，能够检查用于输入改变操作模式的命令或信号的学习控制执行间隔。 数字控制器连续读取加工程序，并将标志F设置为1，直到在学习控制开始命令被读取之后读取学习控制结束命令。 在标志F被设置为1的学习控制间隔期间，确定在学习处理期间是否输入了不适当的命令或信号，使得操作模式变化。 如果输入这样的命令或信号，则执行报警停止或进给保持停止，显示停止的原因，并且学习控制无效。 如果在学习过程中输入了不正确的命令或信号，则停止操作并且显示原因，从而可以容易地校正加工程序。 因此，可以防止由学习控制引起的错误切割等。

公开(公告)号：US20060173571A1

公开(公告)日：2006-08-03

申请号：US11344208

申请日：2006-02-01

申请人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

发明人： Masahiko Hosokawa ,  Masafumi Sano ,  Iwao Makino

IPC分类号： G06F19/00

CPC分类号： G05B19/4063 ,  G05B2219/42018 ,  G05B2219/42141

摘要： A numerical controller capable of checking a learning control execution interval for the entry of a command or signal that varies an operation pattern. The numerical controller reads machining programs in succession and sets a flag F to 1 until a learning control end command is read after a learning control start command is read. In a learning control interval during which the flag F is set to 1, it is determined whether or not an inappropriate command or signal is inputted during a learning process such that the operation pattern is varied. If it is concluded that such a command or signal is inputted, an alarm stop or feed hold stop is performed, the cause of stopping is displayed, and learning control is nullified. If any inappropriate command or signal is inputted during the learning process, the operation is stopped and the cause is displayed, so that the machining programs can be corrected with ease. Thus, wrong cutting or the like can be prevented from being caused by the learning control.

摘要翻译： 一种数字控制器，能够检查用于输入改变操作模式的命令或信号的学习控制执行间隔。 数字控制器连续读取加工程序，并将标志F设置为1，直到在学习控制开始命令被读取之后读取学习控制结束命令。 在标志F被设置为1的学习控制间隔期间，确定在学习处理期间是否输入了不适当的命令或信号，使得操作模式变化。 如果输入这样的命令或信号，则执行报警停止或进给保持停止，显示停止的原因，并且学习控制无效。 如果在学习过程中输入了不正确的命令或信号，则停止操作并且显示原因，从而可以容易地校正加工程序。 因此，可以防止由学习控制引起的错误切割等。

公开(公告)号：US20060150012A1

公开(公告)日：2006-07-06

申请号：US11296533

申请日：2005-12-08

申请人： Masahiko Hosokawa ,  Masafumi Sano ,  Masahiko Miyake

发明人： Masahiko Hosokawa ,  Masafumi Sano ,  Masahiko Miyake

IPC分类号： G06F11/00

CPC分类号： G05B19/4067 ,  G05B2219/24137 ,  G05B2219/36545 ,  G05B2219/36548 ,  G05B2219/50104 ,  G06F11/1451 ,  G06F11/1456

摘要： A specified-data saving means saves a data specified by a data name from a battery-backed-up volatile memory to a nonvolatile memory not requiring battery backup. At the same time, a generation management means stores the data name and time information in the nonvolatile memory, together with the saved data. An individual-data restoring means selects data from among the data stored in the nonvolatile memory based on a specified data name and time information and restores the selected data to the volatile memory.

摘要翻译： 指定数据保存装置将数据名称指定的数据从电池备份的易失性存储器中保存到不需要电池备份的非易失性存储器中。 同时，生成管理装置将数据名称和时间信息与保存的数据一起存储在非易失性存储器中。 单独数据恢复装置基于指定的数据名称和时间信息从存储在非易失性存储器中的数据中选择数据，并将选择的数据恢复到易失性存储器。

公开(公告)号：US08599111B2

公开(公告)日：2013-12-03

申请号：US12162929

申请日：2007-03-08

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  G09G5/10

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

摘要翻译： 显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路，所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压， 以及控制电路，包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件，所述电容器元件的一个端子连接到所述第二晶体管的栅极，并且所述另一端子连接到线路， 以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。 在第一周期期间从线路施加恒定电压。 在第二周期期间，从线路施加灰度电压，并且第二晶体管的栅极和一个端子短路。 此外，基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中，并且在第三周期期间施加扫描电压，使得第二时间的导通时间 晶体管被控制。

公开(公告)号：US08445902B2

公开(公告)日：2013-05-21

申请号：US12990408

申请日：2009-04-28

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/78621

摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

摘要翻译： 提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。 薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。 沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄 层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

公开(公告)号：US08084331B2

公开(公告)日：2011-12-27

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/331

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20110042670A1

公开(公告)日：2011-02-24

申请号：US12990408

申请日：2009-04-28

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/78621

摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

摘要翻译： 提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。 薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。 沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄 层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

公开(公告)号：US07855379B2

公开(公告)日：2010-12-21

申请号：US12123103

申请日：2008-05-19

申请人： Ryo Hayashi ,  Masafumi Sano

发明人： Ryo Hayashi ,  Masafumi Sano

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.

摘要翻译： 在基板上设置有至少具有源电极，漏电极，包括沟道的半导体区域，栅极绝缘膜和栅极电极的多个薄膜晶体管的电子器件，设置在基板之间的器件分离区域 多个薄膜晶体管和半导体区域由相同的金属氧化物层构成，半导体区域的电阻形成为低于器件分离区域的电阻。