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公开(公告)号：US11747389B2
公开(公告)日：2023-09-05
申请号：US16798448
申请日：2020-02-24
发明人： Yulin Chen , Chunhua Zhou , Sichao Li , Wenjie Lin , Tao Zhang
IPC分类号： G01R31/26 , H01L29/20 , H01L27/02 , H01L29/778
CPC分类号： G01R31/2621 , H01L27/0255 , H01L27/0288 , H01L29/2003 , H01L29/7786
摘要： The application relates to a device and method for measuring a high electron mobility transistor. The device provided includes a controller, a protection circuit, a load circuit and a switching circuit electrically connected between the load circuit and the protection circuit. The controller is configured to provide a first control signal having a first value to a semiconductor component at a first time point and provide a second control signal having a second value to the switching circuit at a second time point. The semiconductor component is turned on by the first value of the first control signal, and the switching circuit is turned on by the second value of the second control signal. The second time point is later than the first time point.
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公开(公告)号：US11784237B2
公开(公告)日：2023-10-10
申请号：US17048619
申请日：2019-12-20
发明人： Kingyuen Wong , Han-Chin Chiu , Ming-Hong Chang , Chunhua Zhou , Jinhan Zhang
IPC分类号： H01L29/66 , H01L29/20 , H01L29/10 , H01L29/778
CPC分类号： H01L29/66462 , H01L29/1029 , H01L29/2003 , H01L29/7786 , H01L2924/13064
摘要： A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.
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公开(公告)号：US11699899B2
公开(公告)日：2023-07-11
申请号：US16958159
申请日：2020-04-28
发明人： Hang Liao , Chunhua Zhou
CPC分类号： H02H9/046 , H01L27/0248
摘要： An electronic device includes a first group III nitride transistor and an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a diode and a second transistor. The diode has an anode electrically connected to a gate of the first group III nitride transistor. The second transistor has a drain electrically connected to the gate of the first group III nitride transistor, a gate electrically connected to a cathode of the diode and a source electrically connected to a source of the first group III nitride transistor.
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公开(公告)号：US12125845B2
公开(公告)日：2024-10-22
申请号：US16958157
申请日：2020-04-29
发明人： Hang Liao , Chunhua Zhou
IPC分类号： H01L29/778 , H01L21/8252 , H01L27/06 , H01L29/40 , H01L29/66
CPC分类号： H01L27/0629 , H01L21/8252 , H01L27/0605 , H01L29/404 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： A semiconductor structure includes a first nitride semiconductor layer; a second nitride semiconductor layer and a first conductive structure. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first conductive structure is disposed on the second nitride semiconductor layer. The first conductive structure functions as one of a drain and a source of a transistor and one of an anode and a cathode of a diode.
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公开(公告)号：US12040394B2
公开(公告)日：2024-07-16
申请号：US17064622
申请日：2020-10-07
发明人： Hang Liao , Qiyue Zhao , Chang An Li , Chao Wang , Chunhua Zhou , King Yuen Wong
IPC分类号： H01L29/778 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003
摘要： The present invention relates to a semiconductor device having an improved gate leakage current. The semiconductor device includes: a substrate; a first nitride semiconductor layer, positioned above the substrate; a second nitride semiconductor layer, positioned above the first nitride semiconductor layer and having an energy band gap greater than that of the first nitride semiconductor layer; a source contact and a drain contact, positioned above the second nitride semiconductor layer; a doped third nitride semiconductor layer, positioned above the second nitride semiconductor layer and between the drain contact and the source contact; and a gate electrode, positioned above the doped third nitride semiconductor layer, where the doped third nitride semiconductor layer has at least one protrusion extending along a direction substantially parallel to an interface between the first nitride semiconductor layer and the second nitride semiconductor layer, thereby improving the gate leakage current phenomenon.
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公开(公告)号：US11972996B2
公开(公告)日：2024-04-30
申请号：US17252287
申请日：2020-08-28
发明人： Hang Liao , Qingyuan He , Chunhua Zhou
IPC分类号： H01L23/34 , H01C7/02 , H01C7/04 , H01C17/00 , H01L29/20 , H01L29/205 , H01L29/66 , H01L29/778
CPC分类号： H01L23/34 , H01C7/02 , H01C7/04 , H01C17/00 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7786
摘要： Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.
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公开(公告)号：US11769826B2
公开(公告)日：2023-09-26
申请号：US17976876
申请日：2022-10-31
发明人： Hang Liao , Qiyue Zhao , Chang An Li , Chao Wang , Chunhua Zhou , King Yuen Wong
IPC分类号： H01L29/778 , H01L29/06 , H01L29/20 , H01L29/40
CPC分类号： H01L29/7787 , H01L29/0619 , H01L29/2003 , H01L29/404
摘要： A semiconductor device includes a channel layer, a barrier layer, source contact and a drain contact, a doped group III-V layer, and a gate electrode. The barrier layer is positioned above the channel layer. The source contact and the drain contact are positioned above the barrier layer. The doped group III-V layer is positioned above the barrier layer and between the first drain contact and the first source contact. The first doped group III-V layer has a first non-vertical sidewall and a second non-vertical sidewall. The gate electrode is positioned above the doped group III-V layer and has a third non-vertical sidewall and a fourth non-vertical sidewall. A horizontal distance from the first non-vertical sidewall to the third non-vertical sidewall is different than a horizontal distance from the second non-vertical sidewall to the fourth non-vertical sidewall.
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公开(公告)号：US11515409B2
公开(公告)日：2022-11-29
申请号：US17064630
申请日：2020-10-07
发明人： Hang Liao , Qiyue Zhao , Chang An Li , Chao Wang , Chunhua Zhou , King Yuen Wong
IPC分类号： H01L29/06 , H01L29/778 , H01L29/20 , H01L29/40
摘要： The present invention relates to a semiconductor device with an asymmetric gate structure. The device comprises a substrate; a channel layer, positioned above the substrate; a barrier layer, positioned above the channel layer, the barrier layer and the channel layer being configured to form two-dimensional electron gas (2DEG), and the 2DEG being formed in the channel layer along an interface between the channel layer and the barrier layer; a source contact and a drain contact, positioned above the barrier layer; a doped group III-V layer, positioned above the barrier layer and between the drain contact and the source contact; and a gate electrode, positioned above the doped group III-V layer and configured to form a Schottky junction with the doped group III-V layer, wherein the doped group III-V layer and/or gate electrode has a non-central symmetrical geometry so as to achieve the effect of improving gate leakage current characteristics.
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