公开(公告)号：US11972996B2

公开(公告)日：2024-04-30

申请号：US17252287

申请日：2020-08-28

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： Hang Liao ,  Qingyuan He ,  Chunhua Zhou

IPC: H01L23/34 ,  H01C7/02 ,  H01C7/04 ,  H01C17/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/34 ,  H01C7/02 ,  H01C7/04 ,  H01C17/00 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.

公开(公告)号：US12199000B2

公开(公告)日：2025-01-14

申请号：US18623010

申请日：2024-03-31

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： Hang Liao ,  Qingyuan He ,  Chunhua Zhou

IPC: H01L23/34 ,  H01C7/02 ,  H01C7/04 ,  H01C17/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

Abstract: The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer. The second electrode is disposed on the second nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer and between the first electrode and the second electrode. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.