公开(公告)号：US10446672B2

公开(公告)日：2019-10-15

申请号：US15908393

申请日：2018-02-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xichao Yang ,  Chen-Xiong Zhang

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A tunnel field-effect transistor (TFET) is provided. In the TFET, a channel region (202) connects a source region (201) and a drain region (203); a pocket layer (204) and a gate oxide layer (205) are successively produced between the source region and a gate region (206); a metal layer (208) is produced in a first area in the source region, the first area is located on a side on which the source region is in contact with the pocket layer, and the pocket layer covers at least a part of the metal layer; and the pocket layer and a second area in the source region form a first tunnel junction of the TFET, and the pocket layer and the metal layer form a second tunnel junction of the TFET.

公开(公告)号：US20180190802A1

公开(公告)日：2018-07-05

申请号：US15908393

申请日：2018-02-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xichao Yang ,  Chen-Xiong Zhang

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/739 ,  H01L29/06 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/78

Abstract: A tunnel field-effect transistor (TFET) is provided. In the TFET, a channel region (202) connects a source region (201) and a drain region (203); a pocket layer (204) and a gate oxide layer (205) are successively produced between the source region and a gate region (206); a metal layer (208) is produced in a first area in the source region, the first area is located on a side on which the source region is in contact with the pocket layer, and the pocket layer covers at least a part of the metal layer; and the pocket layer and a second area in the source region form a first tunnel junction of the TFET, and the pocket layer and the metal layer form a second tunnel junction of the TFET.

公开(公告)号：US20170243960A1

公开(公告)日：2017-08-24

申请号：US15587781

申请日：2017-05-05

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xichao Yang ,  Jing Zhao ,  Chen-Xiong Zhang

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/49 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/66977 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878 ,  H01L21/823885 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/08 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78651 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: A complementary tunneling field effect transistor and a manufacturing method are disclosed, which includes: a first drain region and a first source region that are disposed on a substrate, where they include a first dopant; a first channel that is disposed on the first drain region and a second channel that is disposed on the first source region; a second source region that is disposed on the first channel and a second drain region that is disposed on the second channel, where they include a second dopant; a first epitaxial layer that is disposed on the first drain region and the second source region, and a second epitaxial layer that is disposed on the second drain region and the first source region; and a first gate stack layer that is disposed on the first epitaxial layer, and a second gate stack layer that is disposed on the second epitaxial layer.

公开(公告)号：US20150228768A1

公开(公告)日：2015-08-13

申请号：US14542825

申请日：2014-11-17

Applicant: Huawei Technologies Co., Ltd.

Inventor： Jing Zhao ,  Xichao Yang ,  Chen-Xiong Zhang

IPC: H01L29/66 ,  H01L29/08

CPC classification number: H01L29/66977 ,  H01L29/0895 ,  H01L29/66356 ,  H01L29/66477 ,  H01L29/7391

Abstract: A tunneling field effect transistor with a new structure and a preparation method thereof are provided. The tunneling field effect transistor includes an active region between a source and a drain, a gate dielectric layer, and a gate located on a side of the gate dielectric layer deviating from the source, and a tunneling region disposed between the gate dielectric layer and the source and in contact with both the gate dielectric layer and the source. The source includes at least a first area and a second area perpendicularly connected in an “L” shape. The tunneling region is in contact with at least the first area and the second area. The gate dielectric layer is in contact with at least the tunneling region and the source.

Abstract translation: 提供了具有新结构的隧道场效应晶体管及其制备方法。 隧道场效应晶体管包括源极和漏极之间的有源区，栅极电介质层和位于偏离源极的栅极电介质层侧的栅极，以及设置在栅极介电层和栅极电介质层之间的隧道区域 源极并与栅极介电层和源极接触。 源包括至少一个以“L”形垂直连接的第一区域和第二区域。 隧道区域至少与第一区域和第二区域接触。 栅介质层至少与隧道区域和源极接触。

公开(公告)号：US10600881B2

公开(公告)日：2020-03-24

申请号：US16125902

申请日：2018-09-10

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Xichao Yang ,  Chen-Xiong Zhang

IPC: H01L29/423 ,  H01L29/739 ,  H01L29/775 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/66 ,  H01L29/786

Abstract: The present disclosure relates to a tunneling field-effect transistor and a fabrication method. One example transistor includes a semiconductor substrate, a semiconductor nanosheet, a source region and a drain region, a dielectric layer, and a gate metal layer. The semiconductor nanosheet is vertically disposed on the semiconductor substrate. The source region and the drain region are connected using a channel. The drain region, the channel, and the source region are disposed on the semiconductor nanosheet in turn. The drain region is in contact with the semiconductor substrate. The source region is located at an end, of the semiconductor nanosheet, far away from the semiconductor substrate. The dielectric layer comprises at least a gate dielectric layer, is disposed on a surface of the semiconductor nanosheet, and surrounds the channel. The gate metal layer is disposed on a surface of the gate dielectric layer and surrounds the gate dielectric layer.

公开(公告)号：US10141434B2

公开(公告)日：2018-11-27

申请号：US15587781

申请日：2017-05-05

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xichao Yang ,  Jing Zhao ,  Chen-Xiong Zhang

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/739 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A complementary tunneling field effect transistor and a manufacturing method are disclosed, which includes: a first drain region and a first source region that are disposed on a substrate, where they include a first dopant; a first channel that is disposed on the first drain region and a second channel that is disposed on the first source region; a second source region that is disposed on the first channel and a second drain region that is disposed on the second channel, where they include a second dopant; a first epitaxial layer that is disposed on the first drain region and the second source region, and a second epitaxial layer that is disposed on the second drain region and the first source region; and a first gate stack layer that is disposed on the first epitaxial layer, and a second gate stack layer that is disposed on the second epitaxial layer.

公开(公告)号：US09209284B2

公开(公告)日：2015-12-08

申请号：US14542825

申请日：2014-11-17

Applicant: Huawei Technologies Co., Ltd.

Inventor： Jing Zhao ,  Xichao Yang ,  Chen-Xiong Zhang

IPC: H01L29/66 ,  H01L29/08

CPC classification number: H01L29/66977 ,  H01L29/0895 ,  H01L29/66356 ,  H01L29/66477 ,  H01L29/7391

Abstract: A tunneling field effect transistor with a new structure and a preparation method thereof are provided. The tunneling field effect transistor includes an active region between a source and a drain, a gate dielectric layer, and a gate located on a side of the gate dielectric layer deviating from the source, and a tunneling region disposed between the gate dielectric layer and the source and in contact with both the gate dielectric layer and the source. The source includes at least a first area and a second area perpendicularly connected in an “L” shape. The tunneling region is in contact with at least the first area and the second area. The gate dielectric layer is in contact with at least the tunneling region and the source.

Abstract translation: 提供了具有新结构的隧道场效应晶体管及其制备方法。 隧道场效应晶体管包括源极和漏极之间的有源区，栅极电介质层和位于偏离源极的栅极电介质层侧的栅极，以及设置在栅极介电层和栅极电介质层之间的隧道区域 源极并与栅极介电层和源极接触。 源包括至少一个以“L”形垂直连接的第一区域和第二区域。 隧道区域至少与第一区域和第二区域接触。 栅介质层至少与隧道区域和源极接触。