公开(公告)号：US20150380482A1

公开(公告)日：2015-12-31

申请号：US14658121

申请日：2015-03-13

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Ho Kyun AHN ,  Hae Cheon KIM ,  Jong Won LIM ,  Dong Min KANG ,  Yong Hwan KWON ,  SEONG IL KIM ,  Zin Sig KIM ,  Eun Soo NAM ,  Byoung Gue MIN ,  Hyung Sup YOON ,  Kyung Ho LEE ,  Jong Min LEE ,  Kyu Jun CHO

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20 ,  H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L21/02 ,  H01L21/311 ,  H01L21/31 ,  H01L29/778 ,  H01L29/45

CPC classification number: H01L21/28264 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

Abstract translation: 本文提供了包括基板的半导体器件; 形成在所述基板的顶部上的有源层; 形成在所述有源层的顶部上并具有第一孔的保护层; 源电极，形成在保护层顶部的驱动栅电极和漏电极; 以及形成在所述第一孔的顶部上的第一附加栅电极，其中由于施加到所述源电极，漏电极和驱动栅电极中的每一个的电压，向所述有源层，保护层和驱动栅电极施加电场， 并且第一附加栅电极被配置为衰减施加到有源层，保护层和驱动栅电极的至少一部分的电场的尺寸。