知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

28 records (took 0.019 seconds)

    SEMICONDUCTOR APPARATUS AND DEVICE
    1.
    发明申请
    SEMICONDUCTOR APPARATUS AND DEVICE 审中-公开

    公开(公告)号：US20200286943A1

    公开(公告)日：2020-09-10

    申请号：US16803791

    申请日：2020-02-27

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tsutomu Tange ,  Takumi Ogino ,  Hiroaki Kobayashi

    IPC: H01L27/146 ,  H01L23/00

    Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.

    Photoelectric conversion apparatus and equipment including the same
    3.
    发明授权
    Photoelectric conversion apparatus and equipment including the same 有权

    公开(公告)号：US11244978B2

    公开(公告)日：2022-02-08

    申请号：US16600753

    申请日：2019-10-14

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Toshiyuki Ogawa ,  Sho Suzuki ,  Takehito Okabe ,  Mitsuhiro Yomori ,  Yukinobu Suzuki ,  Akihiro Kawano ,  Tsutomu Tange

    IPC: H01L27/146 ,  H04N5/369

    Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.

    Semiconductor apparatus and device
    4.
    发明授权
    Semiconductor apparatus and device 有权

    公开(公告)号：US11195870B2

    公开(公告)日：2021-12-07

    申请号：US16803791

    申请日：2020-02-27

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tsutomu Tange ,  Takumi Ogino ,  Hiroaki Kobayashi

    IPC: H01L27/146 ,  H01L23/00

    Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.

    Semiconductor device, apparatus, and method for producing semiconductor device
    6.
    发明授权
    Semiconductor device, apparatus, and method for producing semiconductor device 有权

    公开(公告)号：US11276723B2

    公开(公告)日：2022-03-15

    申请号：US16597973

    申请日：2019-10-10

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Takumi Ogino ,  Hideaki Ishino ,  Akihiro Shimizu ,  Katsunori Hirota ,  Tsutomu Tange

    IPC: H01L27/146 ,  H01L23/00 ,  H01L23/60 ,  H01L23/58

    Abstract: A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.

    SEMICONDUCTOR APPARATUS AND DEVICE
    7.
    发明申请
    SEMICONDUCTOR APPARATUS AND DEVICE 有权

    公开(公告)号：US20220059597A1

    公开(公告)日：2022-02-24

    申请号：US17520199

    申请日：2021-11-05

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tsutomu Tange ,  Takumi Ogino ,  Hiroaki Kobayashi

    IPC: H01L27/146 ,  H01L23/00

    Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.

Patent Agency Ranking