公开(公告)号：US11233098B2

公开(公告)日：2022-01-25

申请号：US16078560

申请日：2018-01-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Rui Xu ,  Haisheng Wang ,  Yingming Liu ,  Changfeng Li ,  Wei Liu ,  Qingrong Ren ,  Yu Wen

IPC: G06K9/00 ,  H01L27/32 ,  H01L27/12 ,  H01L51/50

Abstract: A display array substrate, a manufacturing method and a display are disclosed herein. The display array substrate includes an array substrate base, an electroluminescent diode array substrate arranged above the array substrate base, including an anode layer, a cathode layer, an electroluminescent EL layer between the anode layer and the cathode layer, and a pixel compensation circuit layer on a side close to the array substrate base. The cathode layer is on a side away from the array substrate base. A photosensitive signal collector may be configured to receive an optical signal reflected by valleys and ridges of a finger and emitted by the electroluminescent EL layer, and convert the collected optical signal into an electrical signal to be output. The photosensitive signal collector may be arranged between the pixel compensation circuit layer and the anode layer of the electroluminescent diode array substrate.

公开(公告)号：US20190267559A1

公开(公告)日：2019-08-29

申请号：US16115009

申请日：2018-08-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Song Liu ,  Yu Wen ,  Jianming Sun ,  Zhengliang Li ,  Xiaochen Ma ,  Hehe Hu ,  Wenlin Zhang ,  Jianhua Du ,  Ce Ning

IPC: H01L51/42 ,  H01L51/44

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

公开(公告)号：US11217697B2

公开(公告)日：2022-01-04

申请号：US16615358

申请日：2018-04-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Yu Wen

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/10 ,  H01L29/167

Abstract: An active layer of the thin-film transistor includes a channel region, a source region and a drain region. The source region and the drain region are respectively arranged on both sides of the channel region, and the channel region includes a polycrystalline silicon structure doped with a fifth group element. A potential difference between the source-drain region and the channel region is increased by doping with the fifth group element.

公开(公告)号：US20200176612A1

公开(公告)日：2020-06-04

申请号：US16615358

申请日：2018-04-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Yu Wen

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L29/167

Abstract: An active layer of the thin-film transistor includes a channel region, a source region and a drain region. The source region and the drain region are respectively arranged on both sides of the channel region, and the channel region includes a polycrystalline silicon structure doped with a fifth group element. A potential difference between the source-drain region and the channel region is increased by doping with the fifth group element.

公开(公告)号：US20180342591A1

公开(公告)日：2018-11-29

申请号：US15841169

申请日：2017-12-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yu Wen

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor includes a gate pattern, a gate insulating layer, an active layer and a source-drain pattern, which are all arranged on a substrate. The source-drain pattern includes a source electrode and a drain electrode. An orthographic projection of the drain electrode on the substrate is shaped like a ring, and an orthographic projection of the source electrode on the substrate is elliptic or circular. The drain electrode is arranged around the source electrode.

公开(公告)号：US10553621B2

公开(公告)日：2020-02-04

申请号：US16302850

申请日：2018-03-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Wei Yang ,  Xinhong Lu ,  Ke Wang ,  Yu Wen

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.