公开(公告)号：US20210062330A1

公开(公告)日：2021-03-04

申请号：US17002296

申请日：2020-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Yufei HU ,  Gang SHEN ,  Feng CHEN

IPC: C23C16/06 ,  C23C16/52 ,  C23C16/455

Abstract: A method for capping a copper surface on a substrate. In embodiments, the methods include exposing a substrate including a copper surface and a dielectric surface to a cobalt precursor gas and a process gas including a reducing agent to selectively form a first cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, wherein a flow rate ratio of process gas to cobalt precursor gas is at least 300:1.

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20220037204A1

公开(公告)日：2022-02-03

申请号：US16983402

申请日：2020-08-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Gang SHEN ,  Feng CHEN ,  Tae Hong HA

IPC: H01L21/768 ,  H01L23/532

Abstract: Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.

公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.