公开(公告)号：US20230123089A1

公开(公告)日：2023-04-20

申请号：US18083173

申请日：2022-12-16

申请人： Applied Materials, Inc.

发明人： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj Benjamin RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

摘要： A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20240044000A1

公开(公告)日：2024-02-08

申请号：US18381534

申请日：2023-10-18

申请人： Applied Materials, Inc.

发明人： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj BENJAMIN RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

CPC分类号： C23C16/45565 ,  H01J37/32458 ,  H01J37/3244 ,  C23C16/50 ,  C23C16/45536 ,  C23C16/4583 ,  H01J2237/3321

摘要： A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20200173022A1

公开(公告)日：2020-06-04

申请号：US16678996

申请日：2019-11-08

申请人： Applied Materials, Inc.

发明人： Xinhai HAN ,  Deenesh PADHI ,  Daemian Raj BENJAMIN RAJ ,  Kristopher ENSLOW ,  Wenjiao WANG ,  Masaki OGATA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Jonghoon BAEK ,  Zakaria IBRAHIMI ,  Juan Carlos ROCHA-ALVAREZ ,  Tza-Jing GUNG

IPC分类号： C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/40 ,  C23C16/34 ,  H01J37/32

摘要： Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US20170162417A1

公开(公告)日：2017-06-08

申请号：US15370682

申请日：2016-12-06

申请人： Applied Materials, Inc.

发明人： Zheng John YE ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Pramit MANNA ,  Michael Wenyoung TSIANG ,  Allen KO ,  Wenjiao WANG ,  Yongjing LIN ,  Prashant Kumar KULSHRESHTHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Kwangduk Douglas LEE ,  Karthik Thimmavajjula NARASIMHA ,  Ziqing DUAN ,  Deenesh PADHI

IPC分类号： H01L21/683 ,  C23C16/505 ,  C23C16/458

CPC分类号： H01L21/6833 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556

摘要： Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.