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公开(公告)号：US20220100084A1
公开(公告)日：2022-03-31
申请号：US17545554
申请日：2021-12-08
Applicant: Applied Materials, Inc.
Inventor： Ludovic GODET , Chien-An CHEN , Brian Alexander COHEN , Wayne MCMILLAN , Ian Matthew MCMACKIN
Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.
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公开(公告)号：US20210395139A1
公开(公告)日：2021-12-23
申请号：US17466803
申请日：2021-09-03
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Chien-An CHEN , Ludovic GODET
Abstract: Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.
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公开(公告)号：US20210269355A1
公开(公告)日：2021-09-02
申请号：US16803956
申请日：2020-02-27
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Chien-An CHEN , Ludovic GODET
Abstract: Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.
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公开(公告)号：US20220326611A1
公开(公告)日：2022-10-13
申请号：US17703315
申请日：2022-03-24
Applicant: Applied Materials, Inc.
Inventor： Jing JIANG , Chien-An CHEN , Rutger MEYER TIMMERMAN THIJSSEN
Abstract: Methods of forming optical devices using nanoimprint lithography and etch processes are provided. In one embodiment, a method is provided that includes depositing a first resist layer on a substrate, the substrate having a hardmask disposed thereon, imprinting a first resist portion of the first resist layer with a first single-height stamp, etching the first resist portion of the first resist layer, etching a first hardmask portion of the hardmask corresponding to the first resist portion of the first resist layer, removing the first resist layer and depositing a second resist layer, imprinting a second resist portion of the second resist layer with a second single-height stamp, etching the second resist portion of the second resist layer, and etching a second hardmask portion of the hardmask corresponding to the second resist portion of the second resist layer.
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公开(公告)号：US20170125241A1
公开(公告)日：2017-05-04
申请号：US15074038
申请日：2016-03-18
Applicant: Applied Materials, Inc.
Inventor： Shaunak MUKHERJEE , Kang Sub YIM , Deenesh PADHI , Kevin M. CHO , Khoi Anh PHAN , Chien-An CHEN , Priyanka DASH
CPC classification number: H01L21/02164 , H01L21/02126 , H01L21/02211 , H01L21/02214 , H01L21/02274 , H01L21/32
Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.
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Patent Agency Ranking
公开(公告)号：US20230280511A1
公开(公告)日：2023-09-07
申请号：US18314953
申请日：2023-05-10
Applicant: Applied Materials, Inc.
Inventor： Sage Toko Garrett DOSHAY , Rutger MEYER TIMMERMAN THIJSSEN , Ludovic GODET , Chien-An CHEN , Pinkesh Rohit SHAH
IPC: G02B5/20
CPC classification number: G02B5/20 , G02B2207/101
Abstract: Embodiments of the present disclosure relate to methods for fabricating optical devices. One embodiment of the method includes disposing a structure material layer on a surface of a substrate and disposing a patterned photoresist over the structure material layer. The patterned photoresist has at least one device portion and at least one auxiliary portion. Each device portion and each auxiliary portion exposes unmasked portions of the structure material layer. The unmasked portions of structure material layer corresponding to each device portion and each auxiliary portion are etched. The etching the unmasked portions forms at least one optical device having device structures corresponding to the unmasked portions of at least one device portion and at least one auxiliary region having auxiliary structures corresponding to the unmasked portions of at least one auxiliary portion.
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公开(公告)号：US20200326621A1
公开(公告)日：2020-10-15
申请号：US16844636
申请日：2020-04-09
Applicant: Applied Materials, Inc.
Inventor： Ludovic GODET , Chien-An CHEN , Brian Alexander COHEN , Wayne MCMILLAN , Ian Matthew MCMACKIN
Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.
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8.发明公开公开(公告)号：US20240111075A1
公开(公告)日：2024-04-04
申请号：US18275383
申请日：2022-01-31
Applicant: Applied Materials, Inc.
Inventor： Russell Chin Yee TEO , James CONNOLLY , Chien-An CHEN , Andrew CEBALLOS , Jing JIANG , Jhenghan YANG , Yongan XU
IPC: G02B1/00
CPC classification number: G02B1/002
Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.
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公开(公告)号：US20200332414A1
公开(公告)日：2020-10-22
申请号：US16795232
申请日：2020-02-19
Applicant: Applied Materials, Inc.
Inventor： Jinrui GUO , Ludovic GODET , Rutger MEYER TIMMERMAN THIJSSEN , Yongan XU , Jhenghan YANG , Chien-An CHEN
Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
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公开(公告)号：US20230151479A1
公开(公告)日：2023-05-18
申请号：US18094265
申请日：2023-01-06
Applicant: Applied Materials, Inc.
Inventor： Jinrui GUO , Ludovic GODET , Rutger MEYER TIMMERMAN THIJSSEN , Yongan XU , Jhenghan YANG , Chien-An CHEN
CPC classification number: C23C16/042 , C23C16/56 , C23C16/308
Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
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