公开(公告)号：US20140251788A1

公开(公告)日：2014-09-11

申请号：US13785880

申请日：2013-03-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhenbin GE ,  Alan A. RITCHIE

IPC: C23C14/34

CPC classification number: C23C14/54 ,  C23C14/3471 ,  C23C14/35 ,  H01J37/32165 ,  H01J37/32403 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J37/3476

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，物理气相沉积室包括具有第一基本频率并且耦合到目标或基板支架之一的第一RF电源; 以及具有第二基本频率并耦合到所述目标或所述衬底支架之一的第二RF电源，其中所述第一和第二基本频率是彼此的整数倍，其中所述第二基本频率被修改为偏移的第二基本频率 这不是第一个基本频率的整数倍。

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC: C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20160244874A1

公开(公告)日：2016-08-25

申请号：US15050409

申请日：2016-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhenbin GE ,  Vivek GUPTA ,  Adolph Miller ALLEN ,  Ryan HANSON

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/54 ,  H03J3/02

CPC classification number: C23C14/345 ,  C23C14/54 ,  H01J37/32174 ,  H01J37/32183 ,  H03J7/04 ,  H03L7/06

Abstract: In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.

Abstract translation: 在一些实施方案中，在布置在物理气相沉积（PVD）室中的衬底上沉积含金属层的方法包括：向PVD室的处理区域提供等离子体形成气体; 向与所述衬底相对设置的目标组件提供第一量的RF功率，以在所述PVD室的所述处理区域内形成等离子体; 从所述靶组件溅射源材料以将含金属的层沉积到所述基底上，其中所述源材料处于第一侵蚀状态; 以及调谐耦合到衬底支撑件的自动电容调谐器，同时溅射源材料，以在目标从第一侵蚀状态侵蚀到第二侵蚀状态时将基板表面处的离子能量保持在预定范围内。