公开(公告)号：US08502190B2

公开(公告)日：2013-08-06

申请号：US13309530

申请日：2011-12-01

Applicant: Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

Inventor： Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.

Abstract translation: 提供LED装置。 LED器件具有导电载体衬底，发光结构，多个柱结构，电介质层，第一电极和第二电极。 发光结构位于导电载体基板上。 柱结构位于发光结构上。 电介质层覆盖柱结构的侧壁。 第一电极位于柱结构上方，第二电极位于导电载体基板上。

公开(公告)号：US08482103B2

公开(公告)日：2013-07-09

申请号：US12963650

申请日：2010-12-09

Applicant: Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

Inventor： Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

IPC: H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/3081 ,  H01L29/045 ,  H01L29/2003

Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.

Abstract translation: 提供了包括基板，掩模层，第一氮化物半导体层和第二氮化物半导体的氮化物半导体模板。 衬底具有多个沟槽，每个沟槽具有底表面，第一倾斜侧壁和第二倾斜侧壁。 掩模层覆盖第二倾斜侧壁并暴露第一倾斜侧壁。 第一氮化物半导体层设置在衬底和掩模层之上。 第一氮化物半导体层填充沟槽并与第一倾斜侧壁接触。 第一氮化物半导体层具有位于沟槽外部的空隙，并且掩模层的部分被空隙暴露。 第一氮化物半导体层具有多个纳米棒。 第二氮化物半导体层覆盖纳米棒。 纳米棒之间的空间并不完全由第二氮化物半导体层填充。

公开(公告)号：US20120161148A1

公开(公告)日：2012-06-28

申请号：US13329336

申请日：2011-12-19

Applicant: Yen-Hsiang Fang ,  Chu-Li Chao ,  Chih-Wei Hu ,  Yih-Der Guo

Inventor： Yen-Hsiang Fang ,  Chu-Li Chao ,  Chih-Wei Hu ,  Yih-Der Guo

IPC: H01L29/06 ,  H01L21/20 ,  H01L29/20

CPC classification number: H01L33/0075 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/12

Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.

Abstract translation: 提供一种氮化物半导体衬底及其制造方法。 氮化物半导体衬底包括基底材料，图案化氮化物半导体，保护层和氮化物半导体层。 图案化氮化物半导体层位于基材上并且包括多个纳米棒结构和多个块图案，并且纳米棒结构的上表面与块图案的上表面基本共面。 保护层覆盖纳米棒结构的侧壁，以阻挡块图案的侧壁。 氮化物半导体层位于图案化的氮化物半导体层上，并且多个纳米孔位于氮化物半导体层和图案化氮化物半导体层之间。

公开(公告)号：US20120074383A1

公开(公告)日：2012-03-29

申请号：US13309530

申请日：2011-12-01

Applicant: Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

Inventor： Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

IPC: H01L33/06

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.

Abstract translation: 提供LED装置。 LED器件具有导电载体衬底，发光结构，多个柱结构，电介质层，第一电极和第二电极。 发光结构位于导电载体基板上。 柱结构位于发光结构上。 电介质层覆盖柱结构的侧壁。 第一电极位于柱结构上方，第二电极位于导电载体基板上。

公开(公告)号：US07663153B2

公开(公告)日：2010-02-16

申请号：US12011304

申请日：2008-01-25

Applicant: Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

Inventor： Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

IPC: H01L31/00

CPC classification number: H01L33/12 ,  H01L33/10 ,  H01L33/22 ,  H01L33/46 ,  H01L2933/0083

Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

Abstract translation: 提供了一种发光二极管（LED）。 LED至少包括基板，锯齿多层，第一类型半导体层，有源发射层和第二类型半导体层。 在LED中，通过自动克隆光子晶体工艺，在第一类半导体层下面的有源发射层的相对侧形成锯齿多层。 由于在LED的基板上存在锯齿多层，可以通过锯齿多层的反射和再循环来再次形成有源发射层的背面的散射光。 因此，所有的光被聚焦以向前辐射，以便提高LED的光提取效率。 此外，由于锯齿多层具有释放热应力并且减小其与基板之间的弹性变形的性能，所以锯齿多层不会在任何高温处理之后剥离或破裂。

公开(公告)号：US20090274883A1

公开(公告)日：2009-11-05

申请号：US12177167

申请日：2008-07-22

Applicant: Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

Inventor： Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

IPC: B32B3/10 ,  C30B25/04

CPC classification number: C30B25/18 ,  C30B29/403 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.

Abstract translation: 提供了用于形成氮化物半导体衬底的初始衬底结构。 初始衬底结构包括衬底，图案化外延层和掩模层。 图案化的外延层位于基板上并且由多个柱形成。 掩模层位于衬底上并覆盖图案化外延层的一部分。 掩模层包括多个棒，并且在棒之间存在空间。 空间暴露图案化外延层的上表面的一部分。

公开(公告)号：US08674393B2

公开(公告)日：2014-03-18

申请号：US12975271

申请日：2010-12-21

Applicant: Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

Inventor： Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

IPC: H01L33/00

CPC classification number: H01L33/007 ,  C30B25/183 ,  C30B29/403 ,  H01L33/12

Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.

Abstract translation: 描述了一种衬底结构，包括起始衬底，起始衬底上的晶体墩和掩模层。 掩模层覆盖每个晶墩的侧壁的上部，连接在其底部的晶体墩之间，并且通过晶体墩之间的空白空间与起始衬底分离。 还描述了外延衬底结构，其可以通过在上述衬底结构上生长外延层形成晶体墩而形成。 在外延层生长之后，晶体墩可能被破坏。

公开(公告)号：US08093081B2

公开(公告)日：2012-01-10

申请号：US12562145

申请日：2009-09-18

Applicant: Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

Inventor： Po-Chun Liu ,  Chu-Li Chao ,  Yih-Der Guo

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed.

Abstract translation: 提供了一种发光二极管的装置及其制造方法。 LED器件通过在衬底上形成图案化外延层，发光结构等而制成。 在随后的工艺中，图案化的外延层用作弱化结构，并且可以自动断裂，从而形成粗糙的表面。 弱化结构形成一定高度，并具有支柱结构。 发光结构形成在弱化结构上。 在室温的冷却过程中，弱化结构自动断裂，从而形成粗糙的表面。

公开(公告)号：US20090114935A1

公开(公告)日：2009-05-07

申请号：US12011304

申请日：2008-01-25

Applicant: Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

Inventor： Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L33/10 ,  H01L33/22 ,  H01L33/46 ,  H01L2933/0083

Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

Abstract translation: 提供了一种发光二极管（LED）。 LED至少包括基板，锯齿多层，第一类型半导体层，有源发射层和第二类型半导体层。 在LED中，通过自动克隆光子晶体工艺，在第一类半导体层下面的有源发射层的相对侧形成锯齿多层。 由于在LED的基板上存在锯齿多层，可以通过锯齿多层的反射和再循环来再次形成有源发射层的背面的散射光。 因此，所有的光被聚焦以向前辐射，以便提高LED的光提取效率。 此外，由于锯齿多层具有释放热应力并且减小其与基板之间的弹性变形的性能，所以锯齿多层不会在任何高温处理之后剥离或破裂。

公开(公告)号：US20080042546A1

公开(公告)日：2008-02-21

申请号：US11554891

申请日：2006-10-31

Applicant: Chen Yang Huang ,  Cheng Wei Chu ,  Chu Li Chao ,  Jim Yong Chi

Inventor： Chen Yang Huang ,  Cheng Wei Chu ,  Chu Li Chao ,  Jim Yong Chi

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01L33/50 ,  B82Y20/00 ,  G02B1/005 ,  G02B6/0053 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0083 ,  Y10S362/80

Abstract: A light-emitting device of high light extraction efficiency comprises a first substrate, a light-emitting chip positioned on the first substrate and configured to emit light beams, a fluorescent material positioned on the light-emitting chip, a photonic crystal positioned on the fluorescent material and a reflector positioned on the photonic crystal and configured to reflect the light beam to the fluorescent material. The first substrate is preferably a metallic cup, and the light-emitting chip is positioned at the bottom of the metallic cup. The photonic crystal includes a second substrate and a plurality of protrusions positioned on the second substrate. Each of the protrusions includes a bottom end positioned on the second substrate and a tip portion smaller than the bottom end. The plurality of protrusions can be triangular pillars, semicircular pillars, sinusoid pillars, pyramids, or cones.

Abstract translation: 具有高光提取效率的发光装置包括：第一基板，位于第一基板上并被配置为发射光束的发光芯片，位于发光芯片上的荧光材料，位于荧光体上的光子晶体 材料和位于光子晶体上并被配置为将光束反射到荧光材料的反射器。 第一基板优选为金属杯，发光芯片位于金属杯的底部。 光子晶体包括第二基板和位于第二基板上的多个突起。 每个突起包括位于第二基底上的底端和小于底端的末端部分。 多个突起可以是三角柱，半圆柱，正弦柱，金字塔或锥体。