公开(公告)号：US09373795B2

公开(公告)日：2016-06-21

申请号：US14345902

申请日：2012-09-12

申请人： Jeremy Burroughes ,  Christopher Newsome

发明人： Jeremy Burroughes ,  Christopher Newsome

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0074 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/0512 ,  H01L51/0566

摘要： An organic semiconductor composition including at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device including a composition without the small molecule crystallization modifier.

摘要翻译： 包含至少一种溶剂，聚合物，第一小分子有机半导体和小分子结晶改性剂的有机半导体组合物。 第一小分子有机半导体：小分子结晶改性剂的重量比为至少6:1，任选至少10:1，任选至少20:1。 小分子结晶改性剂增加沉积在有机晶体管的沟道中的有机半导体层中的第一小分子有机半导体分布的均匀性，其结果是有机晶体管的迁移率高于包括 不含小分子结晶改性剂的组合物。

公开(公告)号：US09087999B2

公开(公告)日：2015-07-21

申请号：US14239533

申请日：2012-08-09

申请人： Christopher Newsome

发明人： Christopher Newsome

IPC分类号： H01L51/05 ,  H01L51/10 ,  H01L51/00

CPC分类号： H01L51/0512 ,  H01L51/0002 ,  H01L51/0541 ,  H01L51/105

摘要： A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode.

摘要翻译： 公开了一种制造诸如有机薄膜晶体管的电子器件的方法。 衬底例如硅酸盐玻璃衬底具有支撑至少一个金属电极的表面，该金属电极包括至少一种金属，例如金，并且衬底的表面的至少一部分被暴露。 该方法包括在衬底表面的暴露部分上选择性地形成自组装层，使得在至少一个金属电极上不形成自组装层，并施加由自组装层排斥的溶液或其它液体 至少一个金属电极，以在所述至少一个金属电极上选择性地形成诸如电荷注入促进材料的其它材料层。

公开(公告)号：US20130168662A1

公开(公告)日：2013-07-04

申请号：US13807190

申请日：2011-06-30

申请人： Thomas Kugler ,  Christopher Newsome ,  Mohd K. Othman

发明人： Thomas Kugler ,  Christopher Newsome ,  Mohd K. Othman

IPC分类号： H01L51/05

CPC分类号： H01L51/0541 ,  H01L51/0026 ,  H01L51/0055 ,  H01L51/05 ,  H01L51/105

摘要： Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.

摘要翻译： 用于制造半导体器件如有机薄膜晶体管的方法以及通过该方法制造的器件，该方法包括以下步骤：在衬底上形成导电电极，用用吸电子取代的芳烃处理电极的表面 在电极上形成电极接触层，并且在形成有机半导体层之前在基板和电极上形成有机半导体层，其中基板和电极被烘烤，以便减少电极接触层上的污染物，从而 促进电极表面上的改善的晶体成核。

公开(公告)号：US20130149812A1

公开(公告)日：2013-06-13

申请号：US13817527

申请日：2011-08-16

申请人： Christopher Newsome

发明人： Christopher Newsome

IPC分类号： H01L51/00

CPC分类号： H01L51/0034 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0074 ,  H01L51/0541 ,  H01L51/0545

摘要： The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.

摘要翻译： 本发明提供了使用选自烷氧基苯和烷基取代的烷氧基苯的溶剂来降低有机薄膜晶体管中的接触电阻，该有机薄膜晶体管包括半导体层，该半导体层包含小分子半导体材料和沉积的聚合物材料的共混物 从所述小分子半导体材料和所述聚合物材料在所述溶剂中的溶液以及在制备有机薄膜晶体管中特别有用的新型半导体掺合物制剂。 所述溶剂产生具有较低绝对接触电阻，较低绝对沟道电阻和较低的接触电阻与总通道电阻的比例的器件。

公开(公告)号：US20110186830A1

公开(公告)日：2011-08-04

申请号：US13056906

申请日：2009-08-05

申请人： Jeremy Burroughes ,  Julian Carter ,  Euan Smith ,  Jonathan Halls ,  Thomas Kugler ,  Christopher Newsome

发明人： Jeremy Burroughes ,  Julian Carter ,  Euan Smith ,  Jonathan Halls ,  Thomas Kugler ,  Christopher Newsome

IPC分类号： H01L51/10 ,  H01L21/20 ,  H01L51/40 ,  H01L21/28

CPC分类号： H01L51/0022 ,  H01L51/0013 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

摘要翻译： 本发明提供一种制造有机薄膜晶体管（TFT）的方法，包括：提供衬底层; 提供栅电极层; 提供介电材料层; 提供有机半导体（OSC）材料层; 提供源极和漏极电极层; 并且其中使用激光诱导热成像（LITI）工艺沉积一层或多层。 优选地，有机TFT是底栅器件，并且源极和漏极电极沉积在有机半导体层上，或者使用LITI沉积在电介质材料层上。 进一步优选地，可以在OSC材料和源极和漏极电极层之间提供掺杂剂材料，其中掺杂剂材料也可以使用LITI沉积。 还优选地，其中掺杂剂可以是电荷中性掺杂剂，例如取代的TCNQ或F4TCNQ。

公开(公告)号：US07851344B2

公开(公告)日：2010-12-14

申请号：US11520668

申请日：2006-09-14

申请人： Thomas Kugler ,  Shunpu Li ,  Christopher Newsome ,  David Russell

发明人： Thomas Kugler ,  Shunpu Li ,  Christopher Newsome ,  David Russell

IPC分类号： H01L21/44

CPC分类号： H05K3/125 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0012 ,  H01L51/0097 ,  H01L2251/105 ,  H01L2251/5369 ,  H05K1/0393 ,  H05K3/1208 ,  H05K2203/013 ,  H05K2203/095 ,  H05K2203/097 ,  H05K2203/1173 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention relates to flexible substrates having on their surface a wetting contrast. The wetting contrast comprises adjacent areas of different hydrophilicity and/or oleophilicity. The present invention further relates to methods of production of such substrates and to methods of producing microelectronic components wherein electronically functional material is deposited onto said substrates.According to a first aspect of the present invention, a method of producing a flexible substrate having a wetting contrast is provided. The method includes the step of forming a first area comprising an inorganic material on a flexible substrate precursor to form a substrate wherein the inorganic material is at least partially exposed at the substrate surface and the first area constitutes a pattern on the precursor surface.

摘要翻译： 本发明涉及在其表面上具有润湿对比度的柔性基底。 润湿对比度包括不同亲水性和/或亲油性的相邻区域。 本发明还涉及这种基材的制造方法以及生产微电子部件的方法，其中将电子功能材料沉积在所述基材上。 根据本发明的第一方面，提供了具有润湿对比度的柔性基板的制造方法。 该方法包括在柔性基板前体上形成包含无机材料的第一区域以形成基板的步骤，其中无机材料在基板表面处至少部分地暴露，并且第一区域在前体表面上构成图案。

公开(公告)号：US07468287B2

公开(公告)日：2008-12-23

申请号：US11363063

申请日：2006-02-28

申请人： Christopher Newsome ,  Thomas Kugler ,  Shunpu Li ,  David Russell

发明人： Christopher Newsome ,  Thomas Kugler ,  Shunpu Li ,  David Russell

IPC分类号： H01L21/00

CPC分类号： H01L51/0005 ,  H01L51/0007 ,  H01L51/424 ,  Y02E10/549

摘要： Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.

摘要翻译： 提供了形成有机半导体聚合物的连续层的异质结的方法。 该方法包括首先在衬底上形成第一有机半导体聚合物层。 然后将成膜材料的溶液沉积在第一有机半导体聚合物的层上。 第一种有机半导体聚合物不溶于该溶液，因此不会因其沉积而受到干扰。 然后将沉积的溶液干燥以形成由成膜材料形成的厚度小于20nm的临时膜。 接下来，将溶解在有机溶剂中的第二有机半导体聚合物的溶液沉积在临时膜上，并将该溶液干燥。 形成临时膜的材料在有机溶剂中的溶解度和临时膜的厚度使得有机溶剂在第二有机半导体聚合物的溶液的干燥期间渗透临时膜的厚度。 这导致临时膜破裂但不干扰第一有机半导体聚合物的层，使得第二有机半导体聚合物的层在第一有机半导体聚合物的层上连续形成。

公开(公告)号：US20070105396A1

公开(公告)日：2007-05-10

申请号：US11589207

申请日：2006-10-30

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0012 ,  H01L51/0529 ,  H01L51/56

摘要： Disclosed is a method for fabricating an electronic device, the method comprising creating a surface energy pattern on a substrate and brush painting a first fluid onto the substrate to form a pattern of fluid corresponding to the surface energy pattern on the substrate. Also disclosed is a thin film transistor comprising a conductive layer, a layer of insulator formed on the conductive layer, a pattern of conductive material and a first self-assembled monolayer (SAM) formed on the layer of insulator, a second SAM formed on the conductive material, and a semiconductor layer formed on the first SAM and the second SAM. Further disclosed is a brush painting apparatus comprising an ink-absorbent brush head, an ink container connected to the brush head by an ink flow path and a conveyor belt, wherein a surface of the conveyor belt faces the brush head.

摘要翻译： 公开了一种制造电子器件的方法，该方法包括在衬底上产生表面能量图案，并将第一流体刷涂到衬底上以形成与衬底上的表面能量图案相对应的流体图案。 还公开了一种薄膜晶体管，其包括导电层，形成在导电层上的绝缘体层，导电材料图案和形成在绝缘体层上的第一自组装单层（SAM），形成在绝缘体层上的第二SAM 导电材料和形成在第一SAM和第二SAM上的半导体层。 进一步公开了一种刷涂装置，其包括吸墨刷头，通过油墨流路连接到刷头的油墨容器和传送带，其中传送带的表面面向刷头。

公开(公告)号：US20070082438A1

公开(公告)日：2007-04-12

申请号：US11540729

申请日：2006-10-02

申请人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

发明人： Shunpu Li ,  Christopher Newsome ,  David Russell ,  Thomas Kugler

IPC分类号： H01L21/8238

CPC分类号： H01L51/055 ,  H01L51/0512

摘要： A method for fabricating an electronic device is disclosed, the method comprising depositing a first layer of insulator over a substrate, depositing a first layer portion over the insulator using a printing technique, and removing a portion of the insulator using a photo-exposure technique or an etching technique, using the first layer portion as a mask. A vertical short channel thin film transistor is also disclosed, the transistor comprising a substrate, a first electrode formed over the substrate, a first layer of insulator formed over a portion of the first electrode, a second electrode formed over the first layer of insulator, a semiconductor layer forming a channel between the first and second electrodes, a dielectric layer formed over the semiconductor layer, and a gate electrode formed over the dielectric layer, wherein the gate electrode spans at least a part of the channel between the first and second electrodes.

摘要翻译： 公开了一种用于制造电子器件的方法，所述方法包括在衬底上沉积第一绝缘体层，使用印刷技术在绝缘体上沉积第一层部分，以及使用照相曝光技术去除绝缘体的一部分， 使用第一层部分作为掩模的蚀刻技术。 还公开了一种垂直短沟道薄膜晶体管，所述晶体管包括衬底，形成在衬底上的第一电极，形成在第一电极的一部分上的第一绝缘体层，形成在第一绝缘体层上的第二电极， 形成在所述第一和第二电极之间的沟道的半导体层，形成在所述半导体层上的电介质层以及形成在所述电介质层上的栅电极，其中所述栅电极跨越所述第一和第二电极之间的所述沟道的至少一部分 。

公开(公告)号：US08895354B2

公开(公告)日：2014-11-25

申请号：US13807190

申请日：2011-06-30

申请人： Thomas Kugler ,  Christopher Newsome ,  Mohd K. Othman

发明人： Thomas Kugler ,  Christopher Newsome ,  Mohd K. Othman

IPC分类号： H01L51/40 ,  H01L51/05 ,  H01L51/10 ,  H01L51/00

CPC分类号： H01L51/0541 ,  H01L51/0026 ,  H01L51/0055 ,  H01L51/05 ,  H01L51/105

摘要： Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.

摘要翻译： 用于制造半导体器件如有机薄膜晶体管的方法以及通过该方法制造的器件，该方法包括以下步骤：在衬底上形成导电电极，用用吸电子取代的芳烃处理电极的表面 在电极上形成电极接触层，并且在形成有机半导体层之前在基板和电极上形成有机半导体层，其中基板和电极被烘烤，以便减少电极接触层上的污染物，从而 促进电极表面上的改善的晶体成核。