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1.发明授权Method of forming organic semiconductor device that includes forming electrode contact layer by treating electrode surfaces with substance containing substituted arene 有权形成有机半导体器件的方法包括通过用含有取代的芳烃的物质处理电极表面形成电极接触层公开(公告)号：US08895354B2
公开(公告)日：2014-11-25
申请号：US13807190
申请日：2011-06-30
CPC分类号： H01L51/0541 , H01L51/0026 , H01L51/0055 , H01L51/05 , H01L51/105
摘要： Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.
摘要翻译： 用于制造半导体器件如有机薄膜晶体管的方法以及通过该方法制造的器件，该方法包括以下步骤：在衬底上形成导电电极，用用吸电子取代的芳烃处理电极的表面 在电极上形成电极接触层，并且在形成有机半导体层之前在基板和电极上形成有机半导体层，其中基板和电极被烘烤，以便减少电极接触层上的污染物，从而 促进电极表面上的改善的晶体成核。
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公开(公告)号：US20130168662A1
公开(公告)日：2013-07-04
申请号：US13807190
申请日：2011-06-30
IPC分类号： H01L51/05
CPC分类号： H01L51/0541 , H01L51/0026 , H01L51/0055 , H01L51/05 , H01L51/105
摘要： Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.
摘要翻译： 用于制造半导体器件如有机薄膜晶体管的方法以及通过该方法制造的器件，该方法包括以下步骤：在衬底上形成导电电极，用用吸电子取代的芳烃处理电极的表面 在电极上形成电极接触层，并且在形成有机半导体层之前在基板和电极上形成有机半导体层，其中基板和电极被烘烤，以便减少电极接触层上的污染物，从而 促进电极表面上的改善的晶体成核。
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