发明授权
US09087999B2 Method of fabricating an electronic device comprising allowing a self-assembled layer to form selectively 有权
一种制造电子装置的方法,包括允许自组装层选择性地形成

Method of fabricating an electronic device comprising allowing a self-assembled layer to form selectively
摘要:
A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode.
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