发明授权
US09087999B2 Method of fabricating an electronic device comprising allowing a self-assembled layer to form selectively
有权
一种制造电子装置的方法,包括允许自组装层选择性地形成
- 专利标题: Method of fabricating an electronic device comprising allowing a self-assembled layer to form selectively
- 专利标题(中): 一种制造电子装置的方法,包括允许自组装层选择性地形成
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申请号: US14239533申请日: 2012-08-09
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公开(公告)号: US09087999B2公开(公告)日: 2015-07-21
- 发明人: Christopher Newsome
- 申请人: Christopher Newsome
- 申请人地址: GB Cambridgeshire
- 专利权人: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
- 当前专利权人: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
- 当前专利权人地址: GB Cambridgeshire
- 代理机构: Marshall, Gerstein & Borun LLP
- 优先权: GB1114215.5 20110818
- 国际申请: PCT/GB2012/000646 WO 20120809
- 国际公布: WO2013/024238 WO 20130221
- 主分类号: H01L51/05
- IPC分类号: H01L51/05 ; H01L51/10 ; H01L51/00
摘要:
A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode.
公开/授权文献
- US20140183516A1 ELECTRONIC DEVICE 公开/授权日:2014-07-03
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