- 专利标题： Memory devices with a connecting region having a band gap lower than a band gap of a body region
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申请号： US15583411申请日： 2017-05-01
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公开(公告)号： US09953710B2公开(公告)日： 2018-04-24
- 发明人: Haitao Liu , Jian Li , Chandra Mouli
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woesner, P.A.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; G11C16/14 ; H01L27/1158 ; H01L27/11582 ; H01L29/792 ; G11C16/04 ; G11C16/10 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/20 ; H01L29/22
摘要：
Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation.
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