- 专利标题： Semiconductor device
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申请号： US15257853申请日： 2016-09-06
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公开(公告)号： US09793343B2公开(公告)日： 2017-10-17
- 发明人: Eri Ogawa , Hiroki Wakimoto , Misaki Takahashi , Yuichi Onozawa
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kanagawa
- 专利权人： FUJI ELECTRIC., LTD.
- 当前专利权人： FUJI ELECTRIC., LTD.
- 当前专利权人地址： JP Kanagawa
- 优先权： JP2015-182760 20150916
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L29/739 ; H01L29/78 ; H01L29/10
摘要：
To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.
公开/授权文献
- US20170077217A1 SEMICONDUCTOR DEVICE 公开/授权日：2017-03-16
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