发明授权
- 专利标题： Semiconductor device and method for producing semiconductor device
- 专利标题（中）： 半导体装置及半导体装置的制造方法
-
申请号： US14400101申请日： 2013-05-10
-
公开(公告)号： US09508803B2公开(公告)日： 2016-11-29
- 发明人: Yuki Nakano , Ryota Nakamura
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP2012-109950 20120511
- 国际申请： PCT/JP2013/063160 WO 20130510
- 国际公布： WO2013/168796 WO 20131114
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L29/06 ; H01L29/40 ; H01L29/16 ; H01L29/45 ; H01L29/66 ; H01L23/00 ; H01L21/283 ; H01L29/10 ; H01L29/808 ; H01L29/417 ; H01L29/739 ; H01L23/495 ; H01L25/18
摘要：
[Problem] To provide a semiconductor device in which the surface of a metal electrode arranged on the outermost surface can be made flat or smooth, and a method for producing said semiconductor device.[Solution] This semiconductor device (1) comprises: an SiC epitaxial layer (3) that has an uneven shape formed, on the basis of a height difference (H1), on the outermost surface where a semiconductor element (MOSFET) is arranged; and a source electrode (13) made of a metal material and formed on the SiC epitaxial layer (3). A polysilicon layer (12) having a surface (121) that is smoother than said uneven shape is provided between the surface (31) of the SiC epitaxial layer (3) and the source electrode (13).
公开/授权文献
信息查询
IPC分类:
