The present invention provides a spin-orbit torque magnetic random access memory (SOT-MRAM) circuit, including a read transistor pair with two read transistors in parallel, a write transistor pair with two write transistors in parallel, a SOT memory cell with a magnetic tunnel junction (MTJ) and a SOT layer, wherein one end of the MTJ is connected to the source of the read transistor pair and the other end of the MTJ is connected to the SOT layer, and one end of the SOT layer is connected to a source line and the other of the SOT layer is connected to the source of the write transistor pair, a read bit line is connected to the drain of the read transistor pair and a write bit line is connected to the drain of the read transistor.