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公开(公告)号：US12126317B1
公开(公告)日：2024-10-22
申请号：US16940980
申请日：2020-07-28
申请人： Altum RF IP B.V.
CPC分类号： H03H7/38 , H01F27/2804 , H01F38/00 , H03F1/565 , H03H3/00
摘要： An apparatus includes a first patch transformer segment, a second patch transformer segment, and a third patch transformer segment. The first, the second and the third patch transformer segments are generally coupled in series in a folded path between a first port and a second port.
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公开(公告)号：US20240348211A1
公开(公告)日：2024-10-17
申请号：US18624973
申请日：2024-04-02
申请人： pSemi Corporation
发明人： Jonathan James Klaren , David Kovac , Eric S. Shapiro , Christopher C. Murphy , Robert Mark Englekirk , Keith Bargroff , Tero Tapio Ranta
CPC分类号： H03F1/223 , H03F1/301 , H03F1/56 , H03F3/193 , H03F3/195 , H03F3/213 , H03F3/245 , H03F2200/102 , H03F2200/105 , H03F2200/165 , H03F2200/18 , H03F2200/21 , H03F2200/222 , H03F2200/225 , H03F2200/243 , H03F2200/294 , H03F2200/297 , H03F2200/301 , H03F2200/306 , H03F2200/387 , H03F2200/391 , H03F2200/399 , H03F2200/42 , H03F2200/451 , H03F2200/48 , H03F2200/489 , H03F2200/492 , H03F2200/498 , H03F2200/555 , H03F2200/61 , H03F2200/78
摘要： Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
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公开(公告)号：US20240322768A1
公开(公告)日：2024-09-26
申请号：US18189561
申请日：2023-03-24
发明人： Muhammad HASSAN
CPC分类号： H03F3/245 , H03F1/565 , H03F2200/294 , H03F2200/387 , H03F2200/451
摘要： An apparatus includes a power amplifier, a first inductor coupled to the power amplifier, a second inductor magnetically coupled with the first inductor, and an impedance matching circuit having a first terminal and a second terminal, wherein the first terminal is coupled to the second inductor, and the second terminal is coupled to an antenna port. The impedance matching circuit includes a third inductor coupled between the first terminal and the second terminal, wherein the third inductor overlaps the first inductor and the second inductor, and one or more capacitors coupled to the third inductor.
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公开(公告)号：US20240313713A1
公开(公告)日：2024-09-19
申请号：US18540105
申请日：2023-12-14
发明人： Takashi SUMIYOSHI
CPC分类号： H03F1/56 , H03F3/193 , H03F3/68 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2203/21142
摘要： An outphasing amplifier includes first to fourth amplifiers, first and second impedance converters, a first matching circuit, a second matching circuit, a third matching circuit matching output impedance of first impedance converter with input impedance of third amplifier, a fourth matching circuit matching output impedance of second impedance converter with input impedance of fourth amplifier, and a combiner combining the first signal amplified by third amplifier and the second signal amplified by fourth amplifier, wherein a first phase difference of the first signal input to third matching circuit with respect to the first signal output from first matching circuit is less than 90° at a center frequency of an operating frequency band, and a second phase difference of the second signal input to fourth matching circuit with respect to the second signal output from second matching circuit is more than 90° at the center frequency.
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公开(公告)号：US20240305252A1
公开(公告)日：2024-09-12
申请号：US18181321
申请日：2023-03-09
申请人： Analog Devices, Inc.
CPC分类号： H03F3/193 , H03F1/26 , H03F1/565 , H03F3/195 , H03F2200/294 , H03F2200/451
摘要： Apparatus and methods for broadband low noise amplifiers (LNAs) with integrated limiters and fast recovery time are provided. In certain embodiments, an LNA includes a radio frequency (RF) amplification circuit, a feedback resistor connected along a feedback path from an output to an input of the RF amplification circuit, an input limiting circuit connected along an RF signal path between an RF input terminal and the input to the RF amplification circuit, and an input bias circuit that provides an input bias voltage to the input of the RF amplification circuit through the input limiting circuit.
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公开(公告)号：US12087711B2
公开(公告)日：2024-09-10
申请号：US17548718
申请日：2021-12-13
发明人： Satoshi Goto , Shunji Yoshimi , Mikiko Fukasawa
IPC分类号： H03F3/21 , H01L23/66 , H01L25/065 , H03F1/56 , H03F3/19
CPC分类号： H01L23/66 , H01L25/0657 , H03F3/21 , H01L2223/6655 , H01L2225/06517 , H03F1/56 , H03F2200/222 , H03F2200/387 , H03F2200/451
摘要： In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.
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公开(公告)号：US20240297625A1
公开(公告)日：2024-09-05
申请号：US18177164
申请日：2023-03-02
发明人： Sadia AFROZ , Conor DONOVAN
CPC分类号： H03F3/45192 , H03F1/223 , H03F1/26 , H03F1/565 , H03F2200/451
摘要： A transimpedance-based baseband filter (BBF) including a two-stage operational transconductance amplifier (OTA) having a first stage based on a folded cascode topology, the first stage electrically coupled to a second stage, the second stage having a class AB topology, the first stage having an N-type and P-type transistor pair located between a P-type transistor and an N-type transistor, the N-type and P-type transistor pair configured to provide bias signals to push-pull transistors in the second stage.
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公开(公告)号：US20240291450A1
公开(公告)日：2024-08-29
申请号：US18586938
申请日：2024-02-26
发明人： Makoto TABEI
CPC分类号： H03F3/245 , H03F1/56 , H03F2200/387
摘要： An amplifier circuit includes: a second FET connected, together with a first FET, between a power supply and a reference potential; a first voltage divider resistor circuit; a first switch element; a second voltage divider resistor circuit; a third voltage divider resistor circuit; and a second switch element. The first FET and the second FET have their adjacent drains and sources connected. Each resistance value of the second voltage divider resistor circuit is greater than each resistance value of the first voltage divider resistor circuit. Each resistance value of the third voltage divider resistor circuit is less than each resistance value of the second voltage divider resistor circuit. The second voltage divider resistor circuit and the third voltage divider resistor circuit have an identical voltage division ratio.
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公开(公告)号：US20240291445A1
公开(公告)日：2024-08-29
申请号：US18581770
申请日：2024-02-20
发明人： Yuri HONDA
CPC分类号： H03F1/565 , H03F3/21 , H03F2200/387
摘要： A first resonant circuit and a second resonant circuit are included, the first resonant circuit includes a first inductance element and a first capacitor, the second resonant circuit includes a second inductance element and a second capacitor, one end portion of the first inductance element is connected to an output terminal of an amplifier, another end portion of the first inductance element is connected to one end portion of the second inductance element and one end portion of the first capacitor, and another end portion of the second inductance element is connected to the power source and one end portion of the second capacitor.
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公开(公告)号：US12068722B2
公开(公告)日：2024-08-20
申请号：US17377710
申请日：2021-07-16
发明人： Yuri Honda
CPC分类号： H03F1/565 , H03F1/0205 , H03F3/45475 , H03F2200/222 , H03F2200/387
摘要： A power amplification circuit includes a first amplifier that amplifies a signal split from an input signal, a second amplifier that amplifies a signal having a different phase from the aforementioned signal, third and fourth amplifiers, and a matching network. The matching network includes a first wiring having a first end connected to an output terminal of the first amplifier and a second end connected to an input terminal of the third amplifier, a second wiring having a first end connected to the input terminal of the third amplifier, and electromagnetically coupled to the first wiring, a third wiring having a first end connected to an output terminal of the second amplifier and a second end connected to an input terminal of the fourth amplifier, and a fourth wiring having a first end connected to the input terminal of the fourth amplifier, and electromagnetically coupled to the third wiring.
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