公开(公告)号：US20250048794A1

公开(公告)日：2025-02-06

申请号：US18788188

申请日：2024-07-30

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Zhichen GU ,  Weisin TAN

IPC: H01L33/30 ,  H01L25/075 ,  H01L33/02 ,  H01L33/06 ,  H01L33/46 ,  H01L33/62

Abstract: A micro LED includes a bonding layer, an N type semiconductor layer formed on the bonding layer; a light emitting layer formed on the N type semiconductor layer, a P type semiconductor layer formed on the light emitting layer, and a top conductive layer formed on the P type semiconductor layer.

公开(公告)号：US12206042B2

公开(公告)日：2025-01-21

申请号：US17562116

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

公开(公告)号：US12191416B2

公开(公告)日：2025-01-07

申请号：US17562393

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

Abstract: A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

公开(公告)号：US20250006859A1

公开(公告)日：2025-01-02

申请号：US18750349

申请日：2024-06-21

Applicant: NICHIA CORPORATION

Inventor： Takuya OKADA

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer; and an electron blocking layer positioned between the p-side semiconductor layer and the active layer. The active layer includes, successively from the n-side semiconductor layer side: a first barrier layer containing Al, a first well layer that contains Al and emits ultraviolet light, a second barrier layer containing Al, and a second well layer that is in contact with the electron blocking layer, contains Al, and emits ultraviolet light. An Al composition ratio of the second well layer is higher than an Al composition ratio of the first well layer. A thickness of the second well layer is less than a thickness of the first well layer.

公开(公告)号：US12183849B2

公开(公告)日：2024-12-31

申请号：US17562355

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.

公开(公告)号：US12166150B2

公开(公告)日：2024-12-10

申请号：US17562152

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

公开(公告)号：US12155006B2

公开(公告)日：2024-11-26

申请号：US17627823

申请日：2020-07-16

Applicant: ALEDIA

Inventor： Jérôme Napierala

IPC: H01L33/02 ,  H01L33/12 ,  H01L33/18 ,  H01L33/24

Abstract: A light emitting diode (LED) having an active region and a three-dimensional (3D) structure. The 3D LED includes a first GaN-based layer having a first content of Aluminium and a first content of Indium, and a second GaN-based layer interposed between and in contact with the first layer and the active region, having a second content of Aluminium and a second content of Indium, the second content of indium being strictly higher than the first content of indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend along semi-polar crystallographic planes. Also described is a method for manufacturing such a 3D LED.

公开(公告)号：US12148858B2

公开(公告)日：2024-11-19

申请号：US17562168

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. An edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer.

公开(公告)号：US12119425B2

公开(公告)日：2024-10-15

申请号：US17655097

申请日：2022-03-16

Applicant: TIANJIN SANAN OPTOELECTRONICS CO., LTD.

Inventor： Chihhung Hsiao ,  Yu-Ren Peng ,  Kunhuang Cai ,  Duxiang Wang ,  Chia-Hung Chang

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/08 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/0093

Abstract: A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InzAlX1Ga1−X1As highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlX2Ga1−X2As first composition graded layer wherein X2 is greater than 0 and less than X1, a GaYIn1−YP highly doped n-type semiconductor layer and a AlX3Ga1−X3As second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.

公开(公告)号：US20240339561A1

公开(公告)日：2024-10-10

申请号：US18604563

申请日：2024-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji Song CHAE ,  Dae Hyun KIM ,  Sang Ho PARK ,  Jae Woong YOO ,  Chul Jong YOO ,  Sang Hoon LEE ,  Joo Hee LEE ,  Jin Hyuk JANG ,  Sang Ho JEON ,  Seon Hong CHOI

IPC: H01L33/02 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44

CPC classification number: H01L33/025 ,  H01L25/167 ,  H01L33/0066 ,  H01L33/44 ,  H01L2933/0025

Abstract: A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.