公开(公告)号：US20250006861A1

公开(公告)日：2025-01-02

申请号：US18752041

申请日：2024-06-24

Applicant: NICHIA CORPORATION

Inventor： Takuya OKADA

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer. The active layer includes, successively from a n-side semiconductor layer side: a first barrier layer containing Al and an n-type impurity, a first well layer containing Al and emitting ultraviolet light, a second barrier layer containing Al, and a second well layer containing Al and emitting ultraviolet light. A highest n-type impurity concentration peak in the first barrier layer is located in a portion of the first barrier layer that is closer to the p-side semiconductor layer than to the n-side semiconductor layer. An Al composition ratio of the first barrier layer is higher than an Al composition ratio of the second barrier layer.

公开(公告)号：US20200075795A1

公开(公告)日：2020-03-05

申请号：US16556162

申请日：2019-08-29

Applicant: NICHIA CORPORATION

Inventor： Takuya OKADA

IPC: H01L33/00 ,  H01L33/32 ,  H01L29/15

Abstract: A method of manufacturing a nitride semiconductor light-emitting element includes growing an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. The step of growing the active layer includes growing a first barrier layer before growing a well layer. The step of growing the first barrier layer includes a first stage where a first nitride semiconductor layer containing In is grown with a first concentration of n-type impurity, a second stage where a second nitride semiconductor layer containing In is grown with a second concentration of n-type impurity higher than the first concentration, a third stage where a third nitride semiconductor layer containing In is grown with a third concentration of n-type impurity lower than the second concentration, and a fourth stage where a fourth nitride semiconductor layer is grown under a growth condition in which an amount of an impurity source gas is decreased or stopped.

公开(公告)号：US20160284944A1

公开(公告)日：2016-09-29

申请号：US15079052

申请日：2016-03-24

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA

IPC: H01L33/48

CPC classification number: B23K26/40 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/32

Abstract: A method of manufacturing a light emitting element includes providing a wafer having a substrate and a semiconductor layered body provided on an upper surface of the substrate, irradiating the substrate with laser light from a side of a lower surface opposite to the upper surface of the substrate to form modified regions in the substrate, and dividing the wafer into light emitting elements at the modified regions as a starting point. The semiconductor layered body includes a first p-type semiconductor layer made of a nitride semiconductor and provided on the upper surface of the substrate, an n-type semiconductor layer made of a nitride semiconductor and provided on the first p-type semiconductor layer, an active layer made of a nitride semiconductor and provided on the n-type semiconductor layer, and a second p-type semiconductor layer made of a nitride semiconductor and provided on the active layer.

Abstract translation: 一种制造发光元件的方法包括提供具有衬底的晶片和设置在衬底的上表面上的半导体层叠体，用与来自衬底的上表面相对的下表面侧的激光照射衬底 以在衬底中形成改质区域，并且将晶片分为修饰区域的发光元件作为起始点。 半导体层叠体包括由氮化物半导体构成的第一p型半导体层，设置在基板的上表面，由氮化物半导体构成的n型半导体层，设置在第一p型半导体层上， 由氮化物半导体制成的有源层，设置在n型半导体层上，第二p型半导体层由氮化物半导体构成，设置在有源层上。

公开(公告)号：US20130270593A1

公开(公告)日：2013-10-17

申请号：US13831211

申请日：2013-03-14

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/10

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US20150270443A1

公开(公告)日：2015-09-24

申请号：US14734961

申请日：2015-06-09

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/10 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract translation: 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US20220158025A1

公开(公告)日：2022-05-19

申请号：US17507058

申请日：2021-10-21

Applicant: NICHIA CORPORATION

Inventor： Takuya OKADA

IPC: H01L33/06 ,  H01L33/32

Abstract: A light-emitting device includes an n-side semiconductor layer comprising an n-type contact layer and an intermediate layer located on the n-type contact layer; an active layer located on the intermediate layer; and a p-side semiconductor layer located on the active layer. The intermediate layer includes at least one stacked portion comprising a first layer and a second layer. The first layer is an n-type nitride semiconductor layer comprising an n-type impurity, Al, and Ga. The second layer is a nitride semiconductor layer that includes Al and Ga, has a lower n-type impurity concentration than the first layer, and has a larger thickness than the first layer. An Al composition ratio of the first layer is higher than an Al composition ratio of the second layer.

公开(公告)号：US20250006859A1

公开(公告)日：2025-01-02

申请号：US18750349

申请日：2024-06-21

Applicant: NICHIA CORPORATION

Inventor： Takuya OKADA

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer; and an electron blocking layer positioned between the p-side semiconductor layer and the active layer. The active layer includes, successively from the n-side semiconductor layer side: a first barrier layer containing Al, a first well layer that contains Al and emits ultraviolet light, a second barrier layer containing Al, and a second well layer that is in contact with the electron blocking layer, contains Al, and emits ultraviolet light. An Al composition ratio of the second well layer is higher than an Al composition ratio of the first well layer. A thickness of the second well layer is less than a thickness of the first well layer.

公开(公告)号：US20230231079A1

公开(公告)日：2023-07-20

申请号：US18156240

申请日：2023-01-18

Applicant: NICHIA CORPORATION

Inventor： Koji ASADA ,  Takuya OKADA

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/02 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L33/62 ,  H01L33/025 ,  H01L33/32 ,  H01L33/0075 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.

公开(公告)号：US20210193865A1

公开(公告)日：2021-06-24

申请号：US17194008

申请日：2021-03-05

Applicant: NICHIA CORPORATION

Inventor： Takuya OKADA

IPC: H01L33/00 ,  H01L29/15 ,  H01L33/32 ,  H01L33/06

Abstract: A nitride semiconductor light-emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer includes: one or more well layers comprising a first well layer that is nearest to the n-side nitride semiconductor layer, and one or more barrier layers comprising a first barrier layer between the first well layer and the n-side nitride semiconductor layer. The first barrier layer comprises a Si-doped InGaN barrier layer and an undoped GaN barrier layer in this order from the n-side nitride semiconductor layer side.

公开(公告)号：US20140175491A1

公开(公告)日：2014-06-26

申请号：US14133920

申请日：2013-12-19

Applicant: Nichia Corporation

Inventor： Daisuke SANGA ,  Takuya OKADA ,  Keisuke SEJIKI ,  Kunihito SUGIMOTO ,  Takao KOSUGI ,  Dai WAKAMATSU

IPC: H01L33/60 ,  H01L33/50

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The light emitting device comprising a light emitting element; and a wavelength converting member having a first face and a second face, in which light emitted from the light emitting element enters in through the first face, and a part of the second face serves as a light emitting face, wherein the light emitting element further comprises a reflection control structure around the light emitting face of the second face, and the reflection control structure comprises a reflection film on the wavelength converting member and an anti-reflection film on the reflection film.

Abstract translation: 发光器件包括发光元件; 以及具有第一面和第二面的波长转换构件，其中从发光元件发射的光通过第一面进入，并且第二面的一部分用作发光面，其中发光元件进一步 包括在第二面的发光面周围的反射控制结构，反射控制结构在波长转换部件上具有反射膜，反射膜上具有防反射膜。