公开(公告)号：US12119425B2

公开(公告)日：2024-10-15

申请号：US17655097

申请日：2022-03-16

Applicant: TIANJIN SANAN OPTOELECTRONICS CO., LTD.

Inventor： Chihhung Hsiao ,  Yu-Ren Peng ,  Kunhuang Cai ,  Duxiang Wang ,  Chia-Hung Chang

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/08 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/0093

Abstract: A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InzAlX1Ga1−X1As highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlX2Ga1−X2As first composition graded layer wherein X2 is greater than 0 and less than X1, a GaYIn1−YP highly doped n-type semiconductor layer and a AlX3Ga1−X3As second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.