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公开(公告)号：US20240038748A1
公开(公告)日：2024-02-01
申请号：US18348995
申请日：2023-07-07
Applicant: Samsung Display Co., LTD.
Inventor： Jae Woong YOO , Jin Hyuk JANG , Sang Ho JEON
IPC: H01L25/16
CPC classification number: H01L25/167 , H01L33/20
Abstract: A display device including: electrodes on a base layer; an insulating layer on the electrodes and including a first protruding pattern and a second protruding pattern; light emitting elements on the insulating layer, a light emitting element from among the light emitting elements including a first end and a second end, wherein the light emitting elements include a first light emitting element, the first end of the first light emitting element being adjacent to the first protruding pattern, and the second end of the first light emitting element being adjacent to the second protruding pattern; a first connecting electrode electrically connected to the first end of the first light emitting element and including a first base portion and first protruding portions connected to the first base portion; and a second connecting electrode electrically connected to the second end of the first light emitting element.
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公开(公告)号：US20230395744A1
公开(公告)日：2023-12-07
申请号：US18111032
申请日：2023-02-17
Applicant: Samsung Display Co., LTD.
Inventor： Jong Won LEE , Bong Chun PARK , Kwan Jae LEE , So Young LEE , Jin Hyuk JANG , Chan Woo JOO , Seon Hong CHOI
CPC classification number: H01L33/025 , H01L25/167 , H01L33/62
Abstract: A light emitting element may include a first semiconductor layer, a second semiconductor layer including a first area, a second area, and a third area that have different doping concentrations, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a first intermediate layer and a second intermediate layer that are disposed between at least one of the first area, the second area, and the third area. The first intermediate layer and the second intermediate layer may include different materials.
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公开(公告)号：US20190096316A1
公开(公告)日：2019-03-28
申请号：US16134209
申请日：2018-09-18
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Bong Gyun KANG , Min Joo LEE , Myung Bo SIM , Shim Ho YI , Sil Yi BANG , Won Bok LEE , Jin Hyuk JANG , Chan Sung JUNG
Abstract: A display device, comprising: a timing control unit receiving a video signal including a control pattern from outside and generating a characteristic control signal and image data based on the control pattern; and a display unit displaying an image based on the image data, wherein the control pattern includes a data pattern in which effective data is encoded, and the timing control unit decodes the data pattern to generate the characteristic control signal including the effective data.
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公开(公告)号：US20240397765A1
公开(公告)日：2024-11-28
申请号：US18402054
申请日：2024-01-02
Applicant: Samsung Display Co., LTD.
Inventor： Jae Woong YOO , Sang Ho PARK , Jin Hyuk JANG , Sang Ho JEON
IPC: H10K59/131 , H10K59/123 , H10K59/32 , H10K102/10
Abstract: A display device includes a first lower electrode disposed on a substrate, a first light emitting element disposed on the first lower electrode, a second electrode disposed on the first light emitting element, a second light emitting element disposed on the second electrode, and a first upper electrode disposed on the second light emitting element. The first lower electrode and the first upper electrode are connected to each other.
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Patent Agency Ranking
公开(公告)号：US20230163234A1
公开(公告)日：2023-05-25
申请号：US17967177
申请日：2022-10-17
Applicant: Samsung Display Co., LTD.
Inventor： Jae Woong YOO , Jin Hyuk JANG , Sung Hwi PARK , Sang Ho JEON , Seon Hong CHOI
CPC classification number: H01L33/025 , H01L27/156 , H01L33/145 , H01L33/24 , H01L33/44
Abstract: A light emitting element includes a light emitting element core including a first area and a second area surrounding the first area. The light emitting element core includes a first semiconductor layer doped with a first dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a second dopant, an element active layer disposed between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer disposed between the element active layer and the second semiconductor layer and doped with the second dopant. The second area of the light emitting element core is located on an outer circumference of the light emitting element core and includes an outer surface of the light emitting element core. A doping concentration of the second dopant of the third semiconductor layer is lower than a defect density of the second area of the light emitting element core.
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公开(公告)号：US20220344536A1
公开(公告)日：2022-10-27
申请号：US17585864
申请日：2022-01-27
Applicant: Samsung Display Co., LTD.
Inventor： Won Ho LEE , Seung A LEE , Jin Hyuk JANG , Jong Hyuk KANG , Hyun Deok IM , Sang Ho JEON , Eun A CHO , Hyun Min CHO
Abstract: A light-emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulating film that surrounds the first semiconductor layer, the second semiconductor layer, and the light emitting layer. A doping concentration of the first semiconductor layer is in a predetermined range. A display device includes the light-emitting element.
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7.发明公开公开(公告)号：US20240339561A1
公开(公告)日：2024-10-10
申请号：US18604563
申请日：2024-03-14
Applicant: Samsung Display Co., LTD.
Inventor： Ji Song CHAE , Dae Hyun KIM , Sang Ho PARK , Jae Woong YOO , Chul Jong YOO , Sang Hoon LEE , Joo Hee LEE , Jin Hyuk JANG , Sang Ho JEON , Seon Hong CHOI
CPC classification number: H01L33/025 , H01L25/167 , H01L33/0066 , H01L33/44 , H01L2933/0025
Abstract: A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.
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公开(公告)号：US20180226045A1
公开(公告)日：2018-08-09
申请号：US15866145
申请日：2018-01-09
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Young Soo SOHN , Min Je KIM , Jin Hyuk JANG
CPC classification number: G09G3/3688 , G02F1/13306 , G02F2203/30 , G09G3/3607 , G09G3/3614 , G09G3/3655 , G09G5/02 , G09G2320/0209 , G09G2320/0247 , G09G2340/16 , G09G2360/145 , G09G2360/16 , G09G2360/18
Abstract: A display device includes: a data mapping portion including a memory having addresses corresponding to locations of pixels and which maps an input image signal to a corresponding address; a pattern detector which detects an image quality deterioration pattern in pattern detection areas from the mapped input image signal; a pattern counting portion which generates pattern information by counting the image quality deterioration pattern; a data analyzing portion which divides the input image signal for each frame and selects a representative value of an input image signal of a frame; and a controller which generates an image data signal based on a first inversion method or a second inversion method by determining whether the counted number of the image quality deterioration pattern exceeds a threshold value based on the pattern information, and determines a level of a common voltage corresponding to the representative value.
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公开(公告)号：US20230275187A1
公开(公告)日：2023-08-31
申请号：US17978379
申请日：2022-11-01
Applicant: Samsung Display Co., LTD.
Inventor： Sang Ho JEON , Ji Song CHAE , Sang Hoon LEE , Jin Hyuk JANG
IPC: H01L33/32 , H01L33/38 , H01L33/62 , H01L33/20 , H01L25/075
CPC classification number: H01L33/32 , H01L33/382 , H01L33/62 , H01L33/20 , H01L25/0753
Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element includes a first semiconductor layer doped with a first-type dopant, a second semiconductor layer doped with a second-type dopant, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes at least one first material layer and at least one second material layer, wherein the at least one first material layer includes a zinc oxide (ZnO)-based material, and the at least one second material layer includes a gallium nitride (GaN)-based material.
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