SEMICONDUCTOR DEVICES
    2.
    发明公开

    公开(公告)号:US20240363678A1

    公开(公告)日:2024-10-31

    申请号:US18767018

    申请日:2024-07-09

    IPC分类号: H01G4/30 H10B12/00

    摘要: A semiconductor device includes a capacitor. The capacitor includes a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction. The dielectric layer includes a first dielectric layer and a second dielectric layer that are interposed between the bottom electrode and the top electrode and are stacked in the first direction. The first dielectric layer is anti-ferroelectric, and the second dielectric layer is ferroelectric. A thermal expansion coefficient of the first dielectric layer is greater than a thermal expansion coefficient of the second dielectric layer.

    METHOD FOR MANUFACTURING MULTILAYER CERAMIC ELECTRONIC COMPONENT, AND MULTILAYER CERAMIC ELECTRONIC COMPONENT

    公开(公告)号:US20240363289A1

    公开(公告)日:2024-10-31

    申请号:US18769737

    申请日:2024-07-11

    IPC分类号: H01G4/30 H01G4/012

    CPC分类号: H01G4/30 H01G4/012 Y10T29/435

    摘要: A method for manufacturing a multilayer ceramic electronic component includes preparing a ceramic green sheet, forming a plurality of internal electrode patterns on a main surface of the ceramic green sheet, applying a ceramic paste above the main surface of the ceramic green sheet, stacking a plurality of the ceramic green sheets, pressing the plurality of stacked ceramic green sheets, and cutting the plurality of pressed ceramic green sheets. The ceramic paste at least partially overlaps end portions of the internal electrode patterns, and a stepped region is provided on the ceramic green sheet. When cutting the ceramic green sheets in a first direction, the cutting is performed at a position of the stepped region between two of the internal electrode patterns adjacent to each other in a second direction.

    MULTILAYER CERAMIC ELECTRONIC COMPONENT
    4.
    发明公开

    公开(公告)号:US20240363286A1

    公开(公告)日:2024-10-31

    申请号:US18671314

    申请日:2024-05-22

    IPC分类号: H01G4/008 H01G4/12 H01G4/30

    摘要: A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer having a main component represented by (Ba1-xCax)(Ti1-y (Zr, Hf)y)O3 (where, 0≤x≤1, 0≤y≤0.5), and including first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween; a first external electrode connected to the first internal electrode; and a second external electrode connected to the second internal electrode, wherein at least one of the dielectric layer and the internal electrode includes Sn or Dy. If Sn, an average content of Sn at an interface between the dielectric layer and the internal electrode is within a range of 5 at % or more and 20 at % or less. If Dy, an average content of Dy at an interface between the dielectric layer and the internal electrode is within a range of 1 at % or more and 5 at % or less.

    Method for preparing supercapacitor with good cycling stability

    公开(公告)号:US12131866B2

    公开(公告)日:2024-10-29

    申请号:US18532830

    申请日:2023-12-07

    CPC分类号: H01G11/86 H01G11/34 H01G11/46

    摘要: A method for preparing a supercapacitor with good cycling stability uses NiO@CoMoO4/NF, an activated carbon plate, a KOH solution (6 mol/L), and polypropylene as raw materials, and is implemented through preparation of an NiO@CoMoO4/NF electrode and assembly of the supercapacitor, wherein the NiO@CoMoO4/NF is the anode of the supercapacitor, the activated carbon plate is the cathode of the supercapacitor, the KOH solution is the electrolyte, and the polypropylene is an isolation plate. The NiO@CoMoO4/NF electrode in the supercapacitor of the present disclosure treated with the ductile material can better adapt to volume changes during the charging and discharging process. After 10,000 cycles of charging and discharging, the capacity of the present disclosure has not faded and still maintains 100% of the maximum capacity, with a high specific capacitance of 79.4 F/g, an energy density of 35.7 Wh/kg, and a functional density of 899.5 W/kg.

    SEMICONDUCTOR STRUCTURES HAVING DEEP TRENCH CAPACITOR AND METHODS FOR MANUFACTURING THE SAME

    公开(公告)号:US20240355871A1

    公开(公告)日:2024-10-24

    申请号:US18763075

    申请日:2024-07-03

    发明人: SZU-YU HOU LI-HAN LIN

    IPC分类号: H01G4/30 H10B12/00

    摘要: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate having a first surface, a plurality of layers disposed on the first surface of the substrate. The plurality of layers includes a first nitride layer disposed on the first surface of the substrate, a first silicon-containing layer disposed on the first nitride layer, an intermediate nitride layer disposed on the first silicon-containing layer, a second silicon-containing layer disposed on the intermediate nitride layer, and a second nitride layer disposed on the second silicon-containing layer. In addition, the semiconductor structure includes a trench capacitor penetrating the plurality of layers and in contact with the substrate. The trench capacitor has a first portion having a first lateral surface and a second portion having a second lateral surface, and the first lateral surface has a slope different from that of the second lateral surface.

    MULTILAYER CERAMIC CAPACITOR
    9.
    发明公开

    公开(公告)号:US20240355546A1

    公开(公告)日:2024-10-24

    申请号:US18760091

    申请日:2024-07-01

    发明人: Shinobu CHIKUMA

    摘要: A multilayer ceramic capacitor includes a multilayer body including dielectric layers and internal electrode layers alternately laminated, and external electrodes each on a corresponding one of end surfaces in a length direction perpendicular or substantially perpendicular to a lamination direction of the multilayer body, and each connected to the internal electrode layers. A surface, in a plan view in the length direction, of each of the external electrodes is covered with an insulating layer except for a frame region having a width of about 1 μm or more and about 100 μm or less from an outer peripheral edge of the surface.

    Power storage device
    10.
    发明授权

    公开(公告)号:US12125963B2

    公开(公告)日:2024-10-22

    申请号:US17294323

    申请日:2019-11-18

    摘要: A power storage device includes a pair of holding plates, several ribs and thin-walled portions. The ribs includes first ribs inclined to an extending direction of a first edge and an extending direction of a second edge and extending along straight lines connecting first engaging portions and second engaging portions, and second ribs extending along a facing direction in which the first edge and the second edge face each other. At least first ribs extend in different directions from each other and form an intersection where the at least two first ribs intersect with each other. At least one of the second ribs has opposite ends connected to the first ribs intersecting with each other.