公开(公告)号：US07348620B2

公开(公告)日：2008-03-25

申请号：US11706000

申请日：2007-02-13

申请人： Chien Chiang ,  Charles Dennison ,  Tyler Lowrey

发明人： Chien Chiang ,  Charles Dennison ,  Tyler Lowrey

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L3/113

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

摘要翻译： 在一些情况下，通过将相变材料层形成为平面构型，相变存储器可以表现出改善的性能和较低的成本。 可以在相变材料层的下方设置加热器，以适当地加热材料以引起相变。 加热器可以耦合到适当的导体。

公开(公告)号：US07129541B2

公开(公告)日：2006-10-31

申请号：US10945246

申请日：2004-09-20

申请人： Sung-Min Kim ,  Hye-Jin Cho ,  Shin-Ae Lee ,  Eun-Jung Yun ,  Dong-Gun Park

发明人： Sung-Min Kim ,  Hye-Jin Cho ,  Shin-Ae Lee ,  Eun-Jung Yun ,  Dong-Gun Park

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L3/113 ,  H01L31/119

CPC分类号： H01L29/78696 ,  H01L29/42336 ,  H01L29/42384 ,  H01L29/66787 ,  H01L29/66825

摘要： A field effect transistor on an active region of a semiconductor substrate includes a vertically protruding thin-body portion of the semiconductor substrate and a vertically oriented gate electrode at least partially inside a cavity defined by opposing sidewalls of the vertically protruding portion of the substrate. The transistor further includes an insulating layer surrounding an upper portion of the vertically oriented gate electrode and a laterally oriented gate electrode on the insulating layer and connected to a top portion of the vertically oriented gate electrode. Accordingly, a T-shaped gate electrode is defined having a lateral portion on a top surface of a semiconductor substrate and having a vertical portion at least partially inside a cavity defined by opposing sidewalls of a vertically protruding portion of the substrate.

摘要翻译： 在半导体衬底的有源区域上的场效应晶体管包括半导体衬底的垂直突出的薄体部分和至少部分地在由衬底的垂直突出部分的相对侧壁限定的空腔内的垂直取向的栅电极。 晶体管还包括围绕垂直取向的栅电极的上部的绝缘层和绝缘层上的横向取向的栅电极，并连接到垂直取向的栅电极的顶部。 因此，T形栅电极被限定为具有在半导体衬底的顶表面上的横向部分，并且具有至少部分至少部分在由衬底的垂直突出部分的相对侧壁限定的空腔内的垂直部分。

公开(公告)号：US5925916A

公开(公告)日：1999-07-20

申请号：US100522

申请日：1998-06-18

申请人： Trung Tri Doan ,  Charles H. Dennison

发明人： Trung Tri Doan ,  Charles H. Dennison

IPC分类号： H01L21/266 ,  H01L21/336 ,  H01L21/762 ,  H01L21/765 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L3/113

CPC分类号： H01L29/6659 ,  H01L21/266 ,  H01L21/76202 ,  H01L21/765

摘要： Integrated circuitry having adjacent electrically isolated field effect transistors is disclosed and which includes a bulk semiconductor substrate; an electrically insulative device isolation mass located on the substrate and positioned between opposing active area regions; a first pair of LDD diffusion regions associated with the active area and abutting against the electrically insulative device isolation mass; a pair of field effect transistors each being received within one active area; a second paid of LDD diffusion regions associated with the active area and abutting against each field effect transistor; and a pair of electrically conductive transistor source and drain diffusion regions which are respectively spaced from the insulative isolation mass and field effect transistor.

摘要翻译： 公开了具有相邻的电隔离场效应晶体管的集成电路，其包括体半导体衬底; 位于基板上并位于相对的有源区域之间的电绝缘器件隔离块; 与所述有源区域相关联并抵靠所述电绝缘器件隔离块的第一对LDD扩散区域; 一对场效应晶体管分别被接收在一个有效区域内; 与有源区域相关联并与每个场效应晶体管邻接的LDD扩散区域的第二次支付; 以及分别与绝缘隔离质量和场效应晶体管间隔开的一对导电晶体管源极和漏极扩散区域。