发明授权
US5925916A Semiconductor processing method of providing electrical isolation
between adjacent semiconductor diffusion regions of different field
effect transistors and integrated circuitry having adjacent
electrically isolated field effect transistors
失效
在不同场效应晶体管的相邻半导体扩散区之间提供电隔离的半导体处理方法和具有相邻电隔离场效应晶体管的集成电路
- 专利标题： Semiconductor processing method of providing electrical isolation between adjacent semiconductor diffusion regions of different field effect transistors and integrated circuitry having adjacent electrically isolated field effect transistors
- 专利标题（中）： 在不同场效应晶体管的相邻半导体扩散区之间提供电隔离的半导体处理方法和具有相邻电隔离场效应晶体管的集成电路
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申请号： US100522申请日： 1998-06-18
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公开(公告)号： US5925916A公开(公告)日： 1999-07-20
- 发明人: Trung Tri Doan , Charles H. Dennison
- 申请人： Trung Tri Doan , Charles H. Dennison
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/266
- IPC分类号： H01L21/266 ; H01L21/336 ; H01L21/762 ; H01L21/765 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L3/113
摘要：
Integrated circuitry having adjacent electrically isolated field effect transistors is disclosed and which includes a bulk semiconductor substrate; an electrically insulative device isolation mass located on the substrate and positioned between opposing active area regions; a first pair of LDD diffusion regions associated with the active area and abutting against the electrically insulative device isolation mass; a pair of field effect transistors each being received within one active area; a second paid of LDD diffusion regions associated with the active area and abutting against each field effect transistor; and a pair of electrically conductive transistor source and drain diffusion regions which are respectively spaced from the insulative isolation mass and field effect transistor.
公开/授权文献
- USD430099S Cleat 公开/授权日：2000-08-29
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