Abstract:
The present invention relates to a method and apparatus for detecting analytes in a medium, and more particularly the present invention relates to an assay based on light diffraction which appears or changes upon the binding of analytes to their specific receptors laid out in patterns on a substrate, which has high sensitivity due to the appropriate choice of such patterns. The present invention is based on the principle that the pattern of recognition elements, which gives rise to the diffraction of the incident light in a diffraction-based assay, can be chosen in such a way so as to facilitate detection, and to enhance the signal to be detected compared to known gratings such as parallel straight lines. In one aspect the substrate itself has a surface topography designed to enhance the diffraction pattern signals. In another aspect the substrate is a diffractive optic element having the analyte-specific receptors affixed to the optic element. In another aspect the diffractive optic element is used as a master stamp for producing patterns of analyte-specific receptors which give the signal enhancements.
Abstract:
The present invention provides a thin film property measuring method using a spectroscopic ellipsometer. With the measuring method, a model including a combination of the film thickness, complex refractive index, or the like, of each layer is formed, and fitting is made for the measured spectra and the spectra calculated based upon the model, with the model and the incident angle being modified over a predetermined number of repetitions, thereby determining the structure, the wavelength dependency of the dielectric constant, and the composition ratio, of a thin film including a compound semiconductor layer on a substrate. Furthermore, new approximate calculation is employed in the present invention, thereby enabling the concentration of the atom of interest contained in polycrystalline compound semiconductor to be calculated.
Abstract:
The present invention relates to a spectrometer module comprising an input, for receiving an incoming optical signal, a variable differential group delay (DGD) element, for applying a variable birefringence retardation to said incoming optical signal, and a detector unit for detecting the power of a signal exiting said variable DGD element, having a defined state of polarization. It also relates to a monitor module, a monitoring unit and a monitoring system, comprising such a spectrometer module for use in monitoring an optical network. Further, the invention relates to a spectrometer device, for spectrometry purposes, comprising a spectrometer module as stated above.
Abstract:
Achromatic optics may be employed in spectroscopic measurement systems. The achromatic optics comprises a spherical mirror receiving a beam of radiation in a direction away from its axis and a pair of lenses: a positive lens and a negative meniscus lens. The negative meniscus lens corrects for the spherical aberration caused by off-axis reflection from the spherical mirror. The positive lens compensates for the achromatic aberration introduced by the negative lens so that the optics, as a whole, is achromatic over visible and ultraviolet wavelengths. Preferably, the two lenses combined have zero power or close to zero power. By employing a spherical mirror, it is unnecessary to employ ellipsoidal or paraboloidal mirrors with artifacts of diamond turning which limit the size of the spot of the sample that can be measured in ellipsometry, reflectometry or scatterometry.
Abstract:
An apparatus for obtaining information on critical dimensions and overlay accuracy of features in a semiconductor structure comprises a light source, a detector and an optical means defining a first optical path and a second optical path. The first optical path and the second optical path are oriented in correspondence with the respective orientations of diffracting patterns provided on the semiconductor structure to obtain the required information without the necessity of rotating the semiconductor structure. This insures a significantly higher throughput.
Abstract:
An apparatus for testing critical design parameters in liquid crystal devices compensates for system-imposed influences on measured values, provides real-time correction for variations in spectral content of the source illumination and permits optimization of the values of control parameters.
Abstract:
Disclosed is spectroscopic ellipsometer system mediated methodology for quantifying thickness and impurity profile defining parameters in mathematical models of impurity profile containing thin membranes having two substantially parallel surfaces which are separated by a thickness, wherein the spectroscopic ellipsometer system operates in near-IR and IR wavelength ranges.